Method and arrangement for controlling semiconductor component

1. A method of controlling a semiconductor component which includes a voltage controlled gate, wherein the method comprises

determining and storing, prior to use of the semiconductor component, reference values of a gate voltage to be applied to the voltage controlled gate of the semiconductor component during a change of operating states and as a function of switched current, switched voltage, and temperature of the semiconductor component;

measuring or estimating the switched current, the switched voltage, and the temperature of the semiconductor component; and

providing a pulse width modulated voltage from a driver circuit to a resistor connected to the voltage controlled gate of the semiconductor component according to the reference values of the gate voltage determined as a function of the measured or estimated switched current, switched voltage, and temperature when the change in operating states of the semiconductor component is desired.

2. The method as claimed in claim 1 , wherein the reference values of the gate voltage are stored as pulse ratios.

3. The method as claimed in claim 1 , wherein the reference values comprise durations of multiple time periods and pulse ratios used during the time periods.

4. The method as claimed in claim 1 , wherein the reference values comprise durations of multiple time periods and pulse ratios used during the time periods.

5. The method as claimed in claim 1 , wherein the durations of consecutive voltage pulses in the pulse width modulated voltage determine the average voltage, which is made equal to a desired voltage in a control period.

6. A control arrangement for controlling a semiconductor component having a voltage controlled gate, the arrangement comprising:

means for storing reference values of a gate voltage to be applied to the voltage controlled gate of the semiconductor component during a change of operating states, which values are determined prior to use of the semiconductor component;

means for providing a pulse width modulated signal based on the reference values of the gate voltage;

a resistive element connected to the voltage controlled gate of the semiconductor component;

a driver circuit for supplying a pulse width modulated voltage according to the pulse width modulated signal to the resistive element connected to the voltage controlled gate of the semiconductor component when the change of operating states of the semiconductor component is desired, wherein the driver circuit comprises:

means for providing galvanic separation for the pulse width modulated signal; and

an amplification circuit for amplifying the pulse width modulated signal and for providing a pulse width modulated voltage according to the reference values of the gate voltage.

7. The control arrangement as claimed in claim 6 , wherein:

the means for providing a pulse width modulated signal is a microprocessor; and

the means for storing reference values of the gate voltage are memory means from which the microprocessor can read stored data.

8. The control arrangement as claimed in claim 7 , wherein the driver circuit comprises:

means for providing galvanic separation for the pulse width modulated signal; and

an amplification circuit for amplifying the pulse width modulated signal and for providing a pulse width modulated voltage according to the reference values of the gate voltage.

9. The control arrangement as claimed in claim 6 , wherein the durations of consecutive voltage pulses in the pulse width modulated voltage determine the average voltage, which is made equal to a desired voltage in a control period.