Nitride semiconductor light emitting element
Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13 . The active layer 12 comprises a first well layer 14 , second well layers 15 interposing the first well layer 14 and disposed at outermost sides among the well layers, and barrier layers 16, 17 disposed between each of the well layers. The second well layer 15 comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer 14 , and the nitride semiconductor light emitting element 1 has peaks in the emission spectrum respectively corresponding to the first well layer 14 and the second well layer 15.
1. A nitride semiconductor light emitting element comprising:
an active layer disposed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer;
the active layer comprising a first well layer, second well layers interposing the first well layer and disposed at outermost sides among the well layers, and barrier layers disposed between each of the well layers;
the second well layers comprising a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer, and
the nitride semiconductor light emitting element having peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer.
2. The nitride semiconductor light emitting element according to claim 1 , wherein a plurality of the first well layers are disposed between the second well layers disposed at outermost sides.
3. The nitride semiconductor light emitting element according to claim 1 , wherein the second well layers comprises outermost second well layers disposed at outermost sides among the well layers and at least one inner second well layer between the outermost second well layers, and at least one first well layer is disposed closer to the n-type semiconductor layer side than the inner second well layer.
4. The nitride semiconductor light emitting element according to claim 3 , wherein the number of layers of the second well layer is greater than the number of layers of the first well layer.
5. The nitride semiconductor light emitting element according to claim 1 , wherein a plurality of the first well layers and a plurality of the second well layers are alternately stacked.
6. The nitride semiconductor light emitting element according to claim 1 , wherein the peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer are in the near-ultraviolet or ultraviolet region.
7. The nitride semiconductor light emitting element according to claim 1 , wherein the first well layer is In a Ga 1-a N (0<a≦1) and the second well layer is In b Ga 1-b N (0<b<1, a−b≧0.02).
8. The nitride semiconductor light emitting element according to claim 1 , wherein the first well layer is In a Ga 1-a N (0<a≦0.1), the second well layer is In b Ga 1-b N (0<b<0.1, a−b≧0.02), and the barrier layer is Al c Ga 1-c N ((0<c≦0.4).
9. The nitride semiconductor light emitting element according to claim 8 , wherein the n-type nitride semiconductor layer and the p-type semiconductor layer are Al d Ga 1-d N (0<d≦1).
10. A nitride semiconductor light emitting element comprising:
an active layer disposed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer;
the active layer comprising a first well layer, second well layers interposing the first well layer and disposed at outermost sides among the well layers, and barrier layers disposed between each of the well layers;
the second well layers comprising a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer,
the nitride semiconductor light emitting element having peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer, and
the second well layers comprises outermost second well layers disposed at outermost sides among the well layers and at least one inner second well layer between the outermost second well layers, and at least one first well layer is disposed closer to the n-type semiconductor layer side than the inner second well layer.
11. The nitride semiconductor light emitting element according to claim 10 , wherein the number of layers of the second well layer is greater than the number of layers of the first well layer.
12. The nitride semiconductor light emitting element according to claim 11 , wherein a plurality of the first well layers and a plurality of the second well layers are alternately stacked.
13. The nitride semiconductor light emitting element according to claim 12 , wherein the peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer are in the near-ultraviolet or ultraviolet region.
14. A nitride semiconductor light emitting element comprising:
an active layer disposed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer;
the active layer comprising a first well layer, second well layers interposing the first well layer and disposed at outermost sides among the well layers, and barrier layers disposed between each of the well layers;
the second well layers comprising a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer, and
the nitride semiconductor light emitting element having peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer and
the peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer are in the near-ultraviolet or ultraviolet region.
15. The nitride semiconductor light emitting element according to claim 14 , wherein a plurality of the first well layers are disposed between the second well layers disposed at outermost sides.
16. The nitride semiconductor light emitting element according to claim 14 , wherein the second well layers comprises outermost second well layers disposed at outermost sides among the well layers and at least one inner second well layer between the outermost second well layers, and at least one first well layer is disposed closer to the n-type semiconductor layer side than the inner second well layer.
17. The nitride semiconductor light emitting element according to claim 16 , wherein the number of layers of the second well layer is greater than the number of layers of the first well layer.
18. The nitride semiconductor light emitting element according to claim 16 , wherein a plurality of the first well layers and a plurality of the second well layers are alternately stacked.