Removal of a sheet from a production apparatus
View Patent ↗A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.
1. A method comprising:
cooling a melt of a material with radiation cooling;
forming a solid sheet of said material floating on a surface of said melt;
transporting said sheet;
cutting said sheet into at east one segment; and
cooling said segment.
2. The method of claim 1 , wherein said material is selected from the group consisting of Si, Si and Ge, Ga, and GaN.
3. The method of claim 1 , further comprising separating said sheet from said melt using a spillway.
4. The method of claim 1 , wherein said cooling of said segment comprises gas cooling using a gas.
5. The method of claim 4 , wherein said cooling of said segment minimizes a lateral thermal gradient across a surface of said segment.
6. The method of claim 1 , wherein said cooling of said segment comprises lowering a temperature of said segment over time while maintaining lateral temperature uniformity across a surface of said segment.
7. The method of claim 6 , wherein said cooling of said segment is transverse across a thickness of said segment.
8. The method of claim 1 , wherein said transporting said sheet comprises said sheet and said surface of said melt moving at approximately the same speed prior to said cutting.
9. A method comprising:
cooling a melt of a material with radiation cooling;
forming a solid sheet of said material floating on a surface of said melt;
transporting said sheet;
cutting said sheet into at least one segment; and
cooling said segment using a gas configured to minimize a lateral thermal gradient across a surface of said segment.
10. The method of claim 9 , wherein said material is selected from the group consisting of Si, Si and Ge, Ga, and GaN.
11. The method of claim 9 , further comprising separating said sheet from said melt using a spillway.
12. The method of claim 9 , wherein said transporting said sheet comprises said sheet and said surface of said melt moving at approximately the same speed prior to said cutting.
13. A method comprising:
cooling a melt of a material with radiation cooling;
forming a solid sheet of said material floating on a surface of said melt;
transporting said sheet;
cutting said sheet into at least one segment; and
cooling said segment, wherein said cooling of said segment comprises lowering a temperature of said segment over time while maintaining lateral temperature uniformity across a surface of said segment and wherein said cooling is transverse across a thickness of said segment.
14. The method of claim 13 , wherein said material is selected from the group consisting of Si, Si and Ge, Ga, and GaN.
15. The method of claim 13 , further comprising separating said sheet from said melt using a spillway.
16. The method of claim 13 , wherein said transporting said sheet comprises said sheet and said surface of said melt moving at approximately the same speed prior to said cutting.