Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co
View Patent ↗A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co 2 (Mn (1-y) Fe y )X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.
1. A magnetoresistive sensor comprising:
an under-layer comprising a first sub-layer comprising Ta, a second sub-layer comprising Cu and both having a (100) crystalline texture formed over the first sub-layer, and a third sub-layer comprising Ag and having a (100) crystalline texture formed over the second sub-layer; and
a magnetic free layer structure formed over and in contact with the under-layer structure.
2. The magnetoresistive sensor as in claim 1 wherein the second has a thickness of 50-80 Å and third sub-layer has a thickness of 30-80 Å.
3. The magnetoresistive sensor as in claim 1 wherein the under-layer has a thickness that is 80 Angstroms or less.
4. The magnetoresistive sensor as in claim 1 wherein the free layer has a <100> crystalline texture.
5. The magnetoresistive sensor as in claim 1 wherein the free layer comprises a ferromagnetic Heusler alloy.
6. The magnetoresistive sensor as in claim 1 wherein the free layer comprises Co 2 (Mn (1-y) Fe y )X (where 0≦y≦1 and X is Si, Ge, Sn, Ga, or a combination thereof), or CoFeX (where X is Si, Ge, Sn, Ga, or a combination thereof).
7. The magnetoresistive sensor as in claim 1 wherein the free layer comprises a layer of CoFe and a layer of Co 2 (Mn (1-y) Fe y )X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), or a layer of CoFe and a layer of CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof).
8. The magnetoresistive sensor as in claim 1 wherein the free layer comprises Co 2 (Mn (1-y) Fe y )X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof) with <100> texture, or CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof) with <100> texture.
9. The magnetoresistive sensor as in claim 1 wherein the under-layer and the free layer are part of a sensor stack that is sandwiched between first and second electrically conductive leads arranged so that sense current flows in a direction that is substantially perpendicular to the plane of the under-layer and free layer.