Pixel structure, organic electro-luminescence display unit, and fabricating method thereof
A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode.
1. A pixel structure disposed on a substrate, comprising:
a gate disposed on the substrate;
a gate insulating layer disposed on the substrate to cover the gate;
a patterned metal-oxide layer disposed on the gate insulating layer, wherein the patterned metal-oxide layer comprises a pixel electrode and an active layer located above the gate;
an etching stop layer disposed on a portion of the active layer, wherein conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer;
a source; and
a drain, wherein the source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer, and the drain is electrically connected to the pixel electrode.
2. The pixel structure as claimed in claim 1 , wherein oxygen vacancy ratio of the portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than oxygen vacancy ratio of the portion of the patterned metal-oxide layer covered by the etching stop layer.
3. The pixel structure as claimed in claim 1 , wherein conductivity of the portion of the active layer uncovered by the etching stop layer is substantially equal to conductivity of the pixel electrode.
4. The pixel structure as claimed in claim 1 , wherein oxygen vacancy ratio of the portion of the active layer uncovered by the etching stop layer is substantially equal to oxygen vacancy ratio of the pixel electrode.
5. The pixel structure as claimed in claim 1 , wherein the active layer comprises a source contact region, a drain contact region, and a channel region connected between the source contact region and the drain contact region, and the etching stop layer is disposed on the channel region.
6. The pixel structure as claimed in claim 5 , wherein the etching stop layer is self-aligned to the channel region.
7. The pixel structure as claimed in claim 5 , wherein conductivity of the source, conductivity of the drain, and conductivity of the pixel electrode are substantially the same.
8. The pixel structure as claimed in claim 5 , wherein conductive carrier concentrations of the source, the drain, and the pixel electrode range from 10 20 cm −3 to 10 21 cm −3 .
9. The pixel structure as claimed in claim 1 , further comprising a passivation layer covering the etching stop layer, the source, the drain, and a portion of the pixel electrode, the passivation layer having an opening partially exposing a portion of the pixel electrode.
10. An organic electro-luminescence display unit disposed on a substrate, comprising:
the pixel structure as claimed in claim 1 ;
an organic electro-luminescence layer disposed on the pixel electrode; and
a top electrode disposed on the organic electro-luminescence layer.
11. The organic electro-luminescence display unit as claimed in claim 10 , wherein oxygen vacancy ratio of the portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than oxygen vacancy ratio of a portion of the patterned metal-oxide layer covered by the etching stop layer.
12. The organic electro-luminescence display unit as claimed in claim 10 , wherein conductivity of the portion of the active layer uncovered by the etching stop layer is substantially equal to conductivity of the pixel electrode.
13. The organic electro-luminescence display unit as claimed in claim 10 , wherein oxygen vacancy ratio of the portion of the active layer uncovered by the etching stop layer is substantially equal to oxygen vacancy ratio of the pixel electrode.
14. The organic electro-luminescence display unit as claimed in claim 10 , wherein the active layer comprises a source contact region, a drain contact region, and a channel region connected between the source contact region and the drain contact region, and the etching stop layer is disposed on the channel region.
15. The organic electro-luminescence display unit as claimed in claim 14 , wherein the etching stop layer is self-aligned to the channel region.
16. The organic electro-luminescence display unit as claimed in claim 14 , wherein oxygen vacancy ratio of the source contact region, oxygen vacancy ratio of the drain contact region, and oxygen vacancy ratio of the pixel electrode are substantially the same.
17. The organic electro-luminescence display unit as claimed in claim 14 , wherein the pixel unit further comprises a passivation layer covering the etching stop layer, the source, the drain, and a portion of the pixel electrode, and the passivation layer has an opening partially exposing a portion of the pixel electrode.