Monolithically integrated active electronic circuit and waveguide structure for terahertz frequencies

1. An electronic system, comprising:

a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point;

an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point,

wherein the second waveguide-coupling point is coupled to the first circuit-coupling point,

wherein the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point,

wherein the input signal and the output signal have frequencies in a terahertz frequency range,

wherein the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically,

wherein the waveguide structure is batch process fabricated on a substrate as a waveguide structure layer, and

wherein the active electronic circuit is batch process fabricated on another substrate as a circuit layer; and

an input layer or an output layer,

wherein the input or output layer is batch process fabricated on additional substrate,

wherein the input or output layer is capable of coupling signals to and/or from the electronic system, and

wherein the circuit layer either overlays the waveguide structure layer and the waveguide structure layer overlays the input layer or the circuit layer underlies the waveguide structure layer and the waveguide structure layer underlies the output layer.

2. The electronic system as recited in claim 1 , further comprising:

at least one conductive probe disposed on the input layer or the output layer,

wherein, as appropriate, electrical coupling between the input layer or the output layer and the waveguide structure layer is enabled by each conductive probe disposed on the input layer or the output layer and coupled to features on the input layer or the output layer and to associated features on the waveguide structure layer; and

at least one conductive probe disposed on the circuit layer,

wherein electrical coupling between the circuit layer and the waveguide structure layer is enabled by each conductive probe disposed on the circuit layer and coupled to features on the circuit layer and to associated features on the waveguide structure layer.

3. The electronic system as recited in claim 1 ,

wherein with the various layers in wafer form the waveguide structure layer is bonded to the input layer or to the output layer and the circuit layer is bonded to the waveguide structure layer.

4. An electronic system, comprising:

a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point;

an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point,

wherein the second waveguide-coupling point is coupled to the first circuit-coupling point,

wherein the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point,

wherein the input signal and the output signal have frequencies in a terahertz frequency range,

wherein the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically,

wherein the waveguide structure is batch process fabricated on a substrate as a waveguide structure layer, and

wherein the active electronic circuit is batch process fabricated on another substrate as a circuit layer;

an input layer and an output layer; and

an additional waveguide structure layer,

wherein the input and output layers are batch process fabricated on substrates,

wherein the input and output layers are capable of coupling signals to and/or from the electronic system, and

wherein the waveguide structure layer overlays the input layer, the circuit layer overlays the waveguide structure layer, the additional waveguide structure layer overlays the circuit layer, and the output layer overlays the additional waveguide structure layer.

5. The electronic system as recited in claim 4 ,

wherein the system is a radial power combiner,

wherein each waveguide structure layer has a waveguide structure cavity etched into it,

wherein the cavity in the waveguide structure layer is coupled to the input layer and to multiple amplifier circuits on the circuit layer, and

wherein the cavity in the additional waveguide structure layer is coupled to the output layer and to the multiple amplifier circuits on the circuit layer.

6. The electronic system as recited in claim 4 , further comprising:

at least one conductive probe disposed on the input layer,

wherein electrical coupling between the input layer and the waveguide structure layer is enabled by each conductive probe disposed on the input layer and coupled to features on the input layer and to associated features on the waveguide structure layer;

at least one conductive probe disposed on the circuit layer,

wherein electrical coupling between the circuit layer and the waveguide structure layer is enabled by each conductive probe disposed on the circuit layer and coupled to features on the circuit layer and to associated features on the waveguide structure layer and

wherein electrical coupling between the circuit layer and the additional waveguide structure layer is enabled by each conductive probe disposed on the circuit layer and coupled to features on the circuit layer and to associated features on the additional waveguide structure layer; and

at least one conductive probe disposed on the output layer,

wherein electrical coupling between the output layer and the additional waveguide structure layer is enabled by each conductive probe disposed on the output layer and coupled to features on the output layer and to associated features on the additional waveguide structure layer.

7. The electronic system as recited in claim 4 ,

wherein with the various layers in wafer form the waveguide structure layer is bonded to the input layer, the circuit layer is bonded to the waveguide structure layer, the additional waveguide structure layer is bonded to the circuit layer, and the output layer is bonded to the additional waveguide structure layer.

8. An electronic system, comprising:

a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point;

an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point,

wherein the second waveguide-coupling point is coupled to the first circuit-coupling point,

wherein the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point,

wherein the input signal and the output signal have frequencies in a terahertz frequency range,

wherein the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically,

wherein the waveguide structure is batch process fabricated on a substrate as a waveguide structure layer, and

wherein the active electronic circuit is batch process fabricated on another substrate as a circuit layer;

a spacer layer,

wherein the spacer layer is batch process fabricated on a spacer substrate; and

an input layer or an output layer,

wherein the input or output layer is batch process fabricated on an additional substrate,

wherein the input or output layer is capable of coupling signals to and/or from the electronic system, and

wherein either the spacer layer overlays the input layer, the waveguide structure layer overlays the spacer layer, and the circuit layer overlays the waveguide structure layer or the waveguide structure layer overlays the circuit layer, the spacer layer overlays the waveguide structure layer, and the output layer underlies the spacer layer.

9. The electronic system as recited in claim 8 , further comprising:

at least one conductive probe disposed on the input layer or the output layer,

wherein, as appropriate, electrical coupling between the input layer or the output layer and the spacer layer is enabled by each conductive probe disposed on the input layer or the output layer and coupled to features on the input layer or the output layer and to associated features on the spacer layer;

at least one conductive probe disposed on the spacer layer,

wherein, electrical coupling between the spacer layer and the waveguide structure layer is enabled by each conductive probe disposed on the spacer layer and coupled to features on the spacer layer and to associated features on the waveguide structure layer; and

at least one conductive probe disposed on the circuit layer,

wherein electrical coupling between the circuit layer and the waveguide structure layer is enabled by each conductive probe disposed on the circuit layer and coupled to features on the circuit layer and to associated features on the waveguide structure layer.

10. The electronic system as recited in claim 8 ,

wherein with the various layers in wafer form the spacer layer is bonded to the input layer or the output layer, the waveguide structure layer is bonded to the spacer layer, and the circuit layer is bonded to the waveguide structure layer.

11. An electronic system, comprising:

a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point;

an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point,

wherein the second waveguide-coupling point is coupled to the first circuit-coupling point,

wherein the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point,

wherein the input signal and the output signal have frequencies in a terahertz frequency range,

wherein the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically,

wherein the waveguide structure is batch process fabricated on a substrate as a waveguide structure layer, and

wherein the active electronic circuit is batch process fabricated on another substrate as a circuit layer;

a first spacer layer;

a second spacer layer

wherein the first and the second spacer layers are batch process fabricated on separate spacer substrates;

an input layer and an output layer,

wherein the input and output layers are batch process fabricated on separate substrates; and

an additional waveguide structure layer,

wherein the input and output layers are capable of coupling signals to and/or from the electronic system,

wherein the first spacer layer overlays the input layer, the waveguide structure layer overlays the first spacer layer, and the circuit layer overlays the waveguide structure layer, and

wherein the additional waveguide structure layer overlays the circuit layer, the second spacer layer overlays the additional waveguide structure layer, and the output layer overlays the second spacer layer.

12. The electronic system as recited in claim 11 ,

wherein the system is a radial power combiner,

wherein each waveguide structure layer has a waveguide structure cavity etched into it,

wherein the cavity in the waveguide structure layer is coupled to the input layer and to multiple amplifier circuits on the circuit layer, and

wherein the cavity in the additional waveguide structure layer is coupled to the output layer and to the multiple amplifier circuits on the circuit layer.

13. The electronic system as recited in claim 11 , further comprising:

at least one conductive probe disposed on the input layer,

wherein electrical coupling between the input layer and the first spacer layer is enabled by each conductive probe disposed on the input layer and coupled to features on the input layer and to associated features on the first spacer layer;

at least one conductive probe disposed on the first spacer layer,

wherein, electrical coupling between the first spacer layer and the waveguide structure layer is enabled by each conductive probe disposed on the first spacer layer and coupled to features on the first spacer layer and to associated features on the waveguide structure layer;

at least one conductive probe disposed on the circuit layer,

wherein electrical coupling between the circuit layer and the waveguide structure layer is enabled by each conductive probe disposed on the circuit layer and coupled to features on the circuit layer and to associated features on the waveguide structure layer and

wherein electrical coupling between the circuit layer and the additional waveguide structure layer is enabled by each conductive probe disposed on the circuit layer and coupled to features on the circuit layer and to associated features on the additional waveguide structure layer;

at least one conductive probe disposed on the second spacer layer,

wherein, electrical coupling between the second spacer layer and the additional waveguide structure layer is enabled by each conductive probe disposed on the second spacer layer and coupled to features on the second spacer layer and to associated features on the additional waveguide structure layer; and

at least one conductive probe disposed on the output layer,

wherein electrical coupling between the output layer and the additional waveguide structure layer is enabled by each conductive probe disposed on the output layer and coupled to features on the output layer and to associated features on the additional waveguide structure layer.

14. The electronic system as recited in claim 11 ,

wherein with the various layers in wafer form the first spacer layer is bonded to the input layer, the waveguide structure layer is bonded to the first spacer layer, the circuit layer is bonded to the waveguide structure layer, the additional waveguide structure layer is bonded to the circuit layer, the second spacer layer is bonded to the additional waveguide structure layer, and the output layer is bonded to the second spacer layer.