Method for forming pad electrode, method for manufacturing liquid crystal display device using the same, and liquid crystal display device manufactured by the method
View Patent ↗A simplified method for forming a pad electrode without using an additional light-irradiation device is disclosed. The method includes forming a gate pad on a substrate, forming a gate insulating layer on a substrate surface, forming a data pad on the gate insulating layer, forming a passivation layer on the substrate surface, forming a first contact hole in the gate insulating layer and the passivation layer, forming a second contact hole in the passivation layer, coating a conductive photoresist on the substrate surface, and forming a gate pad electrode in the first contact hole and a data pad electrode in the second contact hole by ashing the conductive photoresist. The pad electrode is formed in a simple method of ashing the conductive photoresist, thereby decreasing costs.
1. A method of manufacturing an LCD device comprising:
forming a metal line on a substrate;
forming an insulating layer on a surface of the substrate including the metal line;
forming a hole in the insulating layer on the metal line;
coating a conductive photoresist on the surface of the substrate including the hole; and
forming a disconnection-prevention line of conductive photoresist in the hole by ashing the conductive photoresist.
2. The method of claim 1 , wherein the metal line is a gate line or a data line.
3. The method of claim 1 , wherein the ashing is performed with oxygen plasma.
4. A method of manufacturing an LCD device comprising:
forming a gate electrode and a common electrode on a substrate;
forming a gate insulating layer on a surface of the substrate;
forming a semiconductor layer on a predetermined portion of the gate insulating layer;
forming source and drain electrodes on both sides of the semiconductor layer; forming a pixel electrode substantially in parallel with the common electrode;
forming a passivation layer on the surface of the substrate;
forming a contact hole in the passivation layer between the drain electrode and the pixel electrode;
coating a conductive photoresist on the surface of the substrate including the contact hole; and
forming a bridge electrode of conductive photoresist in the contact hole by ashing the coated conductive photoresist.
5. The method of claim 4 , wherein the ashing process is performed with oxygen plasma.
6. A method of manufacturing an LCD device comprising:
forming a gate electrode, a common electrode, and a pixel electrode on a substrate, wherein the common electrode is formed substantially in parallel with the pixel electrode;
forming a gate insulating layer on a surface of the substrate;
forming a semiconductor layer on a predetermined portion of the gate insulating layer;
forming source and drain electrodes on both sides of the semiconductor layer;
forming a passivation layer on the surface of the substrate;
forming a contact hole in the gate insulating layer and the passivation layer between the drain electrode and the pixel electrode;
coating a conductive photoresist on the surface of the substrate including the contact hole; and
forming a bridge electrode of conductive photoresist in the contact hole by ashing the coated conductive photoresist.
7. The method of claim 6 , wherein the ashing process is performed with oxygen plasma.
8. An LCD device comprising:
a substrate;
a gate line formed in a first direction on the substrate;
a data line formed in a second direction substantially perpendicular to the first direction;
an insulating layer on the substrate, wherein the insulating layer has a contact hole that corresponds to at least one of the gate and data lines; and
a disconnection-prevention line connected with the at least one of the gate and data lines through the contact hole, wherein the disconnection-prevention line is formed of conductive photoresist.
9. The LCD device of claim 8 , wherein the conductive photoresist is formed of a conducting polymer material selected from groups of
10. An LCD device comprising:
a substrate;
gate and data lines substantially perpendicular to each other on the substrate, so as to define a unit pixel region;
common and pixel electrodes substantially parallel to each other inside the unit pixel region;
a thin film transistor at a crossing of the gate and data lines, wherein the thin film transistor includes of a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; and
a bridge electrode that connects the drain electrode and the pixel electrode, wherein the bridge electrode is formed of conductive photoresist.
11. The LCD device of claim 10 , wherein the drain electrode and pixel electrode are formed on a same layer.
12. The LCD device of claim 10 , wherein the drain electrode and pixel electrode are formed on different layers.
13. The LCD device of claim 10 , wherein the conductive photoresist is formed of a conducting polymer material selected from groups of