Semiconductor device and method for making the same
View Patent ↗To provide a semiconductor device and a method of making the same, the device being capable of preventing decrease in the withstanding voltage along the direction perpendicular to the source-drain direction and thereby improving the resistance to an overvoltage (overcurrent), the device includes: a p-type semiconductor substrate 201 ; an n-type diffusion region 202 ; a p-type body region 206 , a p-type buried diffusion region 204 , and an n-type drift region 207 within the n-type diffusion region 202 ; an n-type source region 208 and a p-type body contact region 209 within the p-type body region 206 ; an n-type drain region 210 within the n-type drift region 207 ; a gate insulating film above the p-type body region 206 ; and a gate electrode 211 above the gate insulating film, where the region 204 extends away from the region 206 farther than the farther edge of the gate electrode 211 is along a cross section perpendicular to the source-drain direction.
1. A semiconductor device comprising:
a semiconductor substrate of a first conductive type;
a conductive region of a second conductive type above the semiconductor substrate;
a body region of the first conductive type within the conductive region of the second conductive type;
a buried diffusion region of the first conductive type within the conductive region of the second conductive type, the buried diffusion region being provided between the semiconductor substrate and the body region and in contact with the body region;
a source region of the second conductive type and a body contact region of the first conductive type within the body region;
a drift region of the second conductive type within the conductive region of the second conductive type, the drift region of the second conductive type being provided separately from the body region;
a drain region of the second conductive type within the drift region; and
a gate electrode above the body region,
the buried diffusion region of the first conductive type extending away from the body region farther than the gate electrode is, along a cross section perpendicular to a source-drain direction.
2. The semiconductor device according to claim 1 , wherein a distance in which the buried diffusion region of the first conductive type extends away from the body region along the cross section perpendicular to the source-drain direction is larger than a distance in which the buried diffusion region of the first conductive type extends away from the body region along a cross section parallel to the source-drain direction.
3. The semiconductor device according to claim 1 , wherein a distance in which a farther edge of the gate electrode is distanced away from the body region along the cross section perpendicular to the source-drain direction is smaller than a distance in which a farther edge of the gate electrode is distanced away from the body region along a cross section parallel to the source-drain direction.
4. The semiconductor device according to claim 1 , wherein the conductive region of the second conductive type is formed with either a diffusion region or an epitaxial layer.