Copper alloy and liquid-crystal display device
View Patent ↗A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.
1. A method of forming an oxide film on a surface of a copper alloy, comprising the steps of:
providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd; and
diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy,
wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.
2. The method of forming an oxide film on a surface of a copper alloy of claim 1 ,
wherein a thickness of the oxide film is 1 to 10 nm.
3. The method of forming an oxide film on a surface of a copper alloy of claim 2 ,
wherein an electric resistivity of the copper alloy is equal to or more than 1.7 μΩcm and equal to or less than 7 μΩcm.
4. The method of forming an oxide film on a surface of a copper alloy of claim 1 ,
wherein the step of diffusing atoms of the element is performed by heating the copper alloy at a temperature from 200° C. to 600° C.
5. The method of forming an oxide film on a surface of a copper alloy of claim 4 ,
wherein the heating is performed for 5 minutes to 2 hours.
6. A method of forming an oxide film on a surface of a copper alloy, comprising the steps of:
providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd;
forming a layer of the copper alloy on a layer of an oxide; and
diffusing atoms of the element to an interface between the layer of the copper alloy and the layer of the oxide so as to form an oxide film at the interface,
wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.
7. The method of forming an oxide film on a surface of a copper alloy of claim 6 ,
wherein a thickness of the oxide film is 1 to 10 nm.
8. The method of forming an oxide film on a surface of a copper alloy of claim 7 ,
wherein an electric resistivity of the copper alloy is equal to or more than 1.7 μΩcm and equal to or less than 7 μΩcm.
9. The method of forming an oxide film on a surface of a copper alloy of claim 6 ,
wherein the step of diffusing atoms of the element is performed by heating the copper alloy and the layer of the oxide at a temperature from 200° C. to 600° C.
10. The method of forming an oxide film on a surface of a copper alloy of claim 9 ,
wherein the heating is performed for 5 minutes to 2 hours.
11. A method of forming an oxide film on a surface of a copper alloy, comprising the steps of:
providing a copper alloy consisting essentially of copper and manganese; and
diffusing atoms of manganese to a surface of the copper alloy so as to form an oxide film comprising manganese on the surface of the copper alloy,
wherein a concentration of the manganese in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the manganese in the copper.
12. The method of forming an oxide film on a surface of forming an oxide film on a surface of claim 11 .
wherein a thickness of the oxide film is 1 to 10 nm.
13. The method of forming an oxide film on a surface of claim 12 ,
wherein an electric resistivity of the copper alloy is equal to or more than 1.7 μΩcm and equal to or less than 7 μΩcm.
14. The method of forming an oxide film on a surface of claim 11 ,
wherein the diffusion is performed by heating the copper alloy at a temperature from 200° C. to 600° C.
15. The method of forming an oxide film on a surface of claim 14 ,
wherein the heating is performed for 5 minutes to 2 hours.
16. A method of forming an oxide film on a surface of a copper alloy, comprising the steps of:
providing a copper alloy consisting essentially of copper and manganese;
forming a layer of the copper alloy on a layer of a silicon oxide; and
diffusing atoms of manganese to an interface between the layer of the copper alloy and the layer of the silicon oxide so as to form an oxide film including manganese, copper and silicon at the interface,
wherein a concentration of the manganese in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the manganese in the copper.
17. The method of forming an oxide film on a surface of claim 16 ,
wherein a thickness of the oxide film is 1 to 10 nm.
18. The method of forming an oxide film on a surface of claim 17 ,
wherein an electric resistivity of the copper alloy is equal to or more than 1.7 μΩcm and equal to or less than 7 μΩcm.
19. The method of forming an oxide film on a surface of claim 16 ,
wherein the step of diffusing atoms of manganese is performed by heating the copper alloy at a temperature from 200° C. to 600° C.
20. The method of forming an oxide film on a surface of claim 19 ,
wherein the heating is performed for 5 minutes to 2 hours.