IP Library Patent Application 12586655
Patent Application
App. No. 12/586,655

Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector

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Quick Facts
Patent No.
US None
App. No.
12/586,655
Abstract

A method of detecting radiation by which residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device at any temperature. The energy of an infra-red light source is tuned within a predetermined band gap energy range and crystals are transparent to the infra-red light of the energy. Thus, other than the one associated with the ionization of the target deep-level defects, no other absorption occurs. Because of this low absorption, infra-red irradiation can be performed through any surface of the crystal that is transparent to the infra-red light which allows irradiation geometry from any side surface(s) of the detector crystals.

Claims (10)

1 . A radiation detector comprising:

an external optical energy source to provide sufficient energy for trapped charged carriers to escape from defect levels; and

crystals that are transparent to the light of the energy source allowing no additional absorption.

2 . The radiation detector of claim 1 , wherein the external optical energy source is an infra-red light source.

3 . The radiation detector of claim 2 , wherein the energy of the infra-red light source is tuned within the band gap energy range of ˜0.5-0.6 eV.

4 . The radiation detector of claim 2 , wherein the transparent crystals are made of Cadmium Zinc Telluride.

5 . A method of detecting radiation comprising energy of an external infra-red light source tuned within the band gap energy range of ˜0.5-0.8 eV to interact with transparent crystals, the steps comprising:

a) causing the occupancy of the deep-level defects to be maintained close to the thermal equilibrium of the un-irradiated device at any temperature;

b) allowing trapped carriers to escape from the defect levels; and

c) causing the residence time of charge carriers to be dramatically reduced by the external infra-red energy source.

Assignments (3)
CHANGE OF NAME Recorded Mar 6, 2013
From: KROMEK ACQUISITION CORPORATION
To: EV PRODUCTS, INC.
Reel/Frame 029939/0282 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2013
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: KROMEK ACQUISITION CORPORATION
Reel/Frame 029824/0158 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2009
From: PROKESCH, MICHAEL; SZELES, CSABA
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 023335/0651 →