IP Library Granted Patent US 8,110,843
Granted Patent B2
US 8,110,843 · App. 12/586,970 · Granted Feb 7, 2012

Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,110,843
App. No.
12/586,970
Granted
Feb 7, 2012
Kind
B2
Abstract

Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

Claims (33)

1. A light emitting element comprising:

a substrate;

a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked;

a first electrode which is electrically connected with the first conductive layer; and

a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

2. The light emitting element of claim 1 , wherein the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer, and the first electrode is formed on a protruding region of the first conductive layer.

3. The light emitting element of claim 2 , wherein the second electrode is separated apart form the first electrode and surrounds the first electrode.

4. The light emitting element of claim 1 , wherein each of the bottom width of the light emitting structure or the substrate is larger than each of the top width of the light emitting structure or the substrate to have a side slope.

5. The light emitting element of claim 1 , further comprising a dome pattern which is formed on the substrate and the light emitting structure conformally along the dome pattern.

6. The light emitting element of claim 5 , wherein the dome pattern is a convex dome pattern or a concave dome pattern.

7. The light emitting element of claim 1 , wherein n layers (n is a natural number greater than 1) of dielectric layers are formed between a sidewall of the substrate and the second electrode, and m layers (m is a natural number smaller than n) of dielectric layers are formed between a sidewall of the light emitting structure and the second electrode.

8. The light emitting element of claim 1 , wherein the light emitting structure is formed in a cylinder shape.

9. The light emitting element of claim 1 , wherein the light emitting structure is formed on one side of the substrate and the other side of the substrate and a part of the second electrode are formed on a same plane.

10. A light emitting element comprising:

a substrate;

a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, wherein the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer;

a first electrode which is electrically connected with the first conductive layer and formed on a protruding region of the first conductive layer; and

a second electrode which is electrically connected with the second conductive layer, separated apart from the first electrode and surrounding the first electrode.

11. The light emitting element of claim 10 , wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

12. The light emitting element of claim 11 , wherein n layers (n is a natural number greater than 1) of dielectric layers are formed between a sidewall of the substrate and the second electrode and m layers (m is a natural number smaller than n) of dielectric layers are formed between a sidewall of the light emitting structure and the second electrode.

13. The light emitting element of claim 10 , wherein the light emitting structure is formed on one side of the substrate and the other side of the substrate and a part of the second electrode are formed on a same plane.

14. A light emitting device comprising:

a light emitting element comprising:

a substrate;

a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked;

a first electrode which is electrically connected with the first conductive layer; and

a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate.

15. The light emitting device of claim 14 , wherein the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer, and the first electrode is formed on a protruding region of the first conductive layer.

16. The light emitting device of claim 14 , wherein each of the bottom width of the light emitting structure or the substrate is larger than each of the top width of the light emitting structure or the substrate to have a side slope.

17. The light emitting device of claim 14 , further comprising a dome pattern which is formed on the substrate and the light emitting structure conformally along the dome pattern.

18. The light emitting device of claim 14 , wherein n layers (n is a natural number greater than 1) of dielectric layers are formed between a sidewall of the substrate and the second electrode, and m layers (m is a natural number smaller than n) of dielectric layers are formed between a sidewall of the light emitting structure and the second electrode.

19. The light emitting device of claim 14 , wherein the light emitting structure is formed in a cylinder shape.

20. The light emitting device of claim 14 , wherein the light emitting structure is formed on one side of the substrate and the other side of the substrate and a part of the second electrode are formed on a same plane.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2009
From: KIM, YU-SIK; HWANG, SEONG-DEOK; LEE, SEUNG-JAE; YOUN, SUN-PIL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 023351/0972 →
Priority Claims (1)
KR 10-2008-0096685 · Oct 1, 2008 · national
Continuity (1)
Related Publication 20100078670A1 · Apr 1, 2010