System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons
View Patent ↗The optical device includes a waveguide and a light sensor on a base. The light sensor includes a ridge extending from slab regions positioned on opposing sides of the ridge. The ridge includes a multiplication layer and an absorption layer. The absorption layer is positioned to receive at least a portion of the light signal from the waveguide. Additionally, the absorption layer generates a hole and electron pair in response to receiving a photon of the light signal. The multiplication layer is positioned to receive the electron generated in the absorption layer and to generate additional electrons in response to receiving the electron.
1. An optical device, comprising:
a waveguide on a base, the waveguide configured to guide a light signal through a light-transmitting medium; and
a light sensor positioned on the base,
the light sensor including
a ridge extending upward from slab regions positioned on opposing sides of the ridge,
the ridge including field sources configured to generate an electrical field in the ridge,
the field sources being on opposing lateral sides of the ridge, each one of the lateral sides being between a top of the ridge and the slab regions,
the ridge including a multiplication layer and an absorption layer, the absorption layer is positioned to receive at least a portion of the light signal from the waveguide,
the absorption layer is configured to generate a hole and electron pair in response to receiving a photon of the light signal, and
the multiplication layer positioned to receive the electron generated in the absorption layer and being configured to generate additional electrons in response to receiving the electron.
2. The device of claim 1 , wherein the multiplication layer includes the light-transmitting medium.
3. The device of claim 2 , wherein a layer of light-transmitting medium is between the base and the absorption layer.
4. The device of claim 1 , wherein the multiplication layer consists of the light-transmitting medium.
5. The device of claim 1 , wherein the field sources are configured to generate the electrical field such that the electrical field is substantially parallel to the base.
6. The device of claim 1 , wherein field sources are each a doped region.
7. The device of claim 6 , wherein the absorption layer includes a light-absorbing medium that generates the hole and electron pair in response to receiving the photon and one of the doped regions is a doped region of the light-absorbing medium.
8. The device of claim 7 , wherein the doped region of the light-absorbing medium is included both in the ridge and in one of the slab regions.
9. The device of claim 6 , wherein the multiplication layer includes a multiplication medium that generates the additional electrons and one of the doped regions is a doped region of the multiplication medium.
10. The device of claim 9 , wherein the doped region of the multiplication medium is included both in the ridge and in one of the slab regions.
11. The device of claim 1 , wherein the absorption layer includes a light-absorbing medium that generates the hole and electron pair in response to receiving the photon and the light-absorbing medium is germanium.
12. The device of claim 1 , wherein the absorption layer includes a light-absorbing medium that generates the hole and electron pair in response to receiving the photon,
the light-absorbing medium being germanium,
the multiplication layer including silicon,
the light-transmitting medium including silicon, and
a layer of silicon is between the base and the absorption layer.
13. The device of claim 1 , wherein the waveguide is positioned on a top side of the base, and the absorption layer and the multiplication layer being arranged such that a line that is parallel to the top side of the base can extend through both the absorption layer and the multiplication layer.
14. The device of claim 1 , wherein the absorption layer contacts the multiplication layer.
15. The device of claim 1 , further comprising: a charge layer at an interface between the absorption layer and the multiplication layer.
16. The device of claim 15 , wherein the charge layer is a doped region of the multiplication layer.
17. The device of claim 16 , wherein the multiplication layer includes silicon and the charge layer is a doped region of the silicon.
18. The device of claim 17 , wherein one of the field sources is a doped region of the silicon.
19. The device of claim 18 , wherein the absorption region includes germanium and one of the field sources is a doped region of the silicon.
20. The device of claim 19 , wherein germanium and the silicon contact one another.