High haze transparent contact including insertion layer for solar cells, and/or method of making the same
View Patent ↗Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
1. A method of making a front contact for a solar cell, the method comprising:
providing a glass substrate;
disposing a dielectric coating on the glass substrate;
disposing a layer of stoichiometric ITO on the dielectric coating;
sputter-depositing a layer of AZO on the layer of stoichiometric ITO, the layer of AZO being sputter-deposited at a temperature less than 200 degrees C.;
etching the layer of AZO; and
sputter-depositing an insertion layer including sub-oxidized ITO or sub-oxidized AZO between the layer of AZO and the layer of stoichiometric ITO, the insertion layer altering the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided;
baking and/or heat treating the substrate together with the dielectric coating, the layer of stoichiometric ITO, and the layer of AZO.
2. The method of claim 1 , wherein the temperature at which the layer of AZO is sputter-deposited is about room temperature.
3. The method of claim 1 , wherein the etching comprises etching with an acetic acid solution.
4. The method of claim 1 , wherein the etching is performed before the baking and/or heat treating.
5. The method of claim 1 , wherein the etching is performed after the baking and/or heat treating.
6. The method of claim 1 , wherein the dielectric coating comprises titanium oxide and/or silicon oxide.
7. The method of claim 1 , wherein the insertion layer is sub-oxidized ITO, and has an absorption of 3-6% per 100 nm of thickness.
8. The method of claim 1 , wherein the insertion layer is sub-oxidized AZO, and has an absorption of 2-8% per 100 nm of thickness.
9. The method of claim 1 , wherein the insertion layer comprises less oxygen than the layer of AZO.
10. The method of claim 1 , wherein the insertion layer shifts the 002 peak of the layer of AZO compared to a situation where no insertion layer is provided.
11. The method of claim 1 , further comprising providing an over-oxidized layer adjacent to the insertion layer, the over-oxided layer and the insertion layer comprising common elements.
12. The method of claim 1 , wherein the layer of stoichiometric ITO is graded such that there is more oxygen closer to the AZO and less oxygen closer to the dielectric coating.
13. The method of claim 1 , wherein the layer of AZO is graded such that there is more oxygen closer to the AZO and less oxygen closer to the dielectric coating.
14. A method of making a solar cell, the method comprising:
connecting the front contact of claim 1 to an a-Si semiconductor layer.
15. A method of making a front contact for a solar cell, the method comprising:
providing a glass substrate;
sputter-depositing a dielectric coating on the glass substrate;
sputter-depositing a layer of stoichiometric ITO on the dielectric coating;
sputter-depositing a layer of AZO on the layer of stoichiometric ITO; and
sputter-depositing an insertion layer including sub-oxidized ITO or sub-oxidized AZO between the layer of AZO and the layer of stoichiometric ITO, the insertion layer altering the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
16. The method of claim 15 , wherein the insertion layer comprises sub-oxidized ITO and has an absorption of 3-6% per 100 nm of thickness.
17. The method of claim 15 , wherein the insertion layer comprises sub-oxidized AZO and has an absorption of 2-8% per 100 nm of thickness.
18. The method of claim 15 , wherein the AZO sputter-deposition is performed without any intentional heating of the glass substrate.
19. The method of claim 15 , further comprising etching the layer of AZO.
20. The method of claim 15 , further comprising baking and/or heat treating the substrate together with the dielectric coating, the layer of stoichiometric ITO, the layer of AZO, and the insertion layer.
21. A method of making a solar cell, the method comprising:
connecting the front contact of claim 15 to an a-Si semiconductor layer.
22. A front contact for a solar cell, comprising:
a glass substrate;
a dielectric coating disposed on the glass substrate;
a layer of stoichiometric ITO disposed on the dielectric coating; and
a layer of AZO sputter-deposited on the layer of ITO at a temperature less than 200 degrees C.;
an insertion layer provided between the layer of AZO and the layer of stoichiometric ITO; wherein the insertion layer comprises sub-oxidized ITO or sub-oxidized AZO, the insertion layer altering the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided,
wherein the layer of AZO is etched,
wherein the substrate is baked and/or heat treated together with the dielectric coating, the layer of stoichiometric ITO, and the layer of AZO.
23. The front contact of claim 22 , wherein the temperature at which the layer of AZO is sputter-deposited is about room temperature.
24. The front contact of claim 22 , wherein the dielectric coating comprises titanium oxide and/or silicon oxide.
25. The front contact of claim 22 , wherein the insertion layer is sub-oxidized ITO, and has an absorption of 3-6% per 100 nm of thickness.
26. The front contact of claim 22 , wherein the insertion layer is sub-oxidized AZO, and has an absorption of 2-8% per 100 nm of thickness.
27. The front contact of claim 22 , wherein the insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
28. The front contact of claim 27 , wherein the insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to shift the 002 peak of the layer of AZO compared to a situation where no insertion layer is provided.
29. The front contact of claim 22 , wherein the layer of stoichiometric ITO is graded such that there is more oxygen closer to the AZO and less oxygen closer to the dielectric coating.
30. The front contact of claim 22 , wherein the layer of AZO is graded such that there is more oxygen closer to the AZO and less oxygen closer to the dielectric coating.
31. A solar cell, comprising:
a front contact according to claim 22 ; and
an a-Si semiconductor layer.
32. A front contact for a solar cell, comprising:
a glass substrate;
a dielectric coating sputter-deposited on the glass substrate;
a layer of stoichiometric ITO sputter-deposited on the dielectric coating;
a layer of AZO sputter-deposited on the layer of stoichiometric ITO; and
a sputter-deposited insertion layer including sub-oxidized ITO or sub-oxidized AZO provided between the layer of AZO and the layer of stoichiometric ITO,
wherein the insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
33. The front contact of claim 32 , wherein the insertion layer is sub-oxidized ITO and has an absorption of 3-6% per 100 nm of thickness.
34. The front contact of claim 32 , wherein the insertion layer is sub-oxidized AZO and has an absorption of 2-8% per 100 nm of thickness.
35. The front contact of claim 32 , wherein the layer of AZO is etched.
36. A solar cell, comprising:
a front contact according to claim 32 ; and
an a-Si semiconductor layer.