Method for preparing IGZO particles and method for preparing IGZO film by using the IGZO particles
A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles.
1. A method for preparing IGZO, comprising the following steps:
(A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt;
(B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and
(C) heating the oxide precursor to obtain IGZO particles.
2. The method as claimed in claim 1 , further comprising a step (B1) after the step (B): washing the oxide precursor.
3. The method as claimed in claim 1 , wherein the oxide precursor is heated at 150° C. to 250° C. in the step (C).
4. The method as claimed in claim 1 , wherein the oxide precursor is heated for 30 min to 2 hr in the step (C).
5. The method as claimed in claim 1 , wherein the metal acid salts are selected from the group consisting of metal nitrates, metal sulfides, metal chlorides, metal sulfites, metal phosphates, metal phosphites, and a combination thereof.
6. The method as claimed in claim 1 , wherein the solution of the metal acid salts comprises zinc nitrate, indium nitrate, and gallium nitrate.
7. The method as claimed in claim 1 , wherein the basic solution is selected from the group consisting of ammonium hydroxide, NaOH solution, KOH solution, Ca(OH) 2 solution, Mg(OH) 2 solution, and a combination thereof.
8. The method as claimed in claim 1 , wherein the basic solution is ammonium hydroxide.
9. The method as claimed in claim 1 , wherein the diameters of the IGZO particles are 10 nm to 750 nm.
10. A method for preparing an IGZO film, comprising the following steps:
(a) preparing an IGZO suspension containing IGZO particles, a dispersant, and water;
(b) coating a substrate with the IGZO suspension; and
(c) baking the substrate coated with the IGZO suspension, to obtain an IGZO film on the substrate.
11. The method as claimed in claim 10 , further comprising a step (d) after the step (c): treating the IGZO film by an annealing process.
12. The method as claimed in claim 11 , wherein the annealing process is performed by a laser annealing.
13. The method as claimed in claim 10 , wherein the content of the IGZO particles is 1 wt% to 20 wt% based on the total weight of the IGZO suspension.
14. The method as claimed in claim 10 , wherein the diameters of the IGZO particles are 10 nm to 750 nm.
15. The method as claimed in claim 10 , wherein the dispersant is selected from the group consisting of sodium carboxymethyl cellulose, sodium tripolyphosphate, sodium hexametaphosphate, sodium pyrophosphate, tris-(2-ethylhexyl) phosphate, sodium dodecyl sulfate, methylpentanol, poly-acrylamide, polyethylene glycol fatty acid ester, and a combination thereof.
16. The method as claimed in claim 10 , wherein the dispersant is sodium carboxymethyl cellulose.
17. The method as claimed in claim 10 , further comprising a step (a1) after the step (a): milling the IGZO suspension.
18. The method as claimed in claim 10 , wherein the substrate is coated with the IGZO suspension through spin coating, roll coating, printing, or inkjet coating in the step (b).
19. The method as claimed in claim 10 , wherein the substrate coated with the IGZO suspension is baked at 85° C. to 99° C. in the step (c).