White organic electroluminescent element and lighting device
View Patent ↗Disclosed is a white light-emitting organic electroluminescent device, which is excellent in stability of emission chromaticity over a long operation period, while having high electrical efficiency, long life, excellent storage stability and excellent color rendering properties. Also disclosed is an illuminating device using such an organic electroluminescent device. Specifically disclosed is an organic electroluminescent device having a light-emitting layer between an anode and a cathode, which is characterized by comprising a light-emitting layer A having a maximum emission wavelength of not more than 480 nm and containing a phosphorescent dopant having a maximum emission wavelength of not more than 480 nm, and a light-emitting layer B arranged between the light-emitting layer A and the anode, which has a maximum emission wavelength of not less than 510 nm and contains a phosphorescent dopant. This organic electroluminescent device is also characterized in that the concentration of the phosphorescent dopant contained in the light-emitting layer A varies in the thickness direction of the light-emitting layer A. Also specifically disclosed is an illuminating device using such a white light-emitting organic electroluminescent device.
1. A white organic electroluminescent element comprising:
light emitting layers between an anode and a cathode,
wherein the light emitting layers include:
a light emitting layer A which contains a host compound and a phosphorescence emitting dopant exhibiting a maximum emission wavelength of 480 nm or less; and
a light emitting layer B which contains a phosphorescence emitting dopant exhibiting a maximum emission wavelength of 510 nm or more,
provided that the light emitting layer B is located between the light emitting layer A and the anode; and
a concentration of the phosphorescence emitting dopant in the light emitting layer A changes in a thickness direction of the light emitting layer A,
wherein the concentration of the phosphorescence emitting dopant contained in the light emitting layer A is decreased from a side of the anode to a side of the cathode in a thickness direction of the light emitting layer A;
wherein the phosphorescence emitting dopant contained in the light emitting layer A has at least one of partial structures represented by Formulas (A) or (B):
wherein
Ra represents a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group;
Rb and Rc each represent a hydrogen atom or a substituent;
Al represents a group of atoms necessary to form an aromatic ring or an aromatic heterocyclic ring; and
M represents Ir or Pt,
wherein
Ra represents a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group;
Rb, Rc, Rb 1 and Rc 1 each represent a hydrogen atom or a substituent;
Al represents a group of atoms necessary to form an aromatic ring or an aromatic heterocyclic ring; and
M represents Ir or Pt; and
the host compound contained in the light emitting layer A is represented by Formula (a):
wherein
X represents O;
Ar represents an aromatic ring; and
n is an integer of 0 to 8.
2. The white organic electroluminescent element described in claim 1 ,
wherein the phosphorescence emitting dopant contained in the light emitting layer A exhibits a maximum emission wavelength of 465 nm or less.
3. The white organic electroluminescent element described in claim 1 ,
wherein the light emitting layer B contains at least two phosphorescence emitting dopants each exhibiting an maximum emission wavelength differing in an amount of 30 nm or more with each other.
4. The white organic electroluminescent element described in claim 1 ,
wherein the light emitting layer A and the light emitting layer B each contain the host compound represented by the Formula (a), and the host compound has a glass transition temperature of 90° C. or more.
5. A lighting device comprising the white organic electroluminescent element described in claim 1 .
6. The white organic electroluminescent element described in claim 1 ,
wherein the phosphorescence emitting dopant contained in the light emitting layer A has an ionization energy of higher than 5.1 eV.