Light emitting device with anodized metallization
View Patent ↗A light emitting device ( 100 ) is provided, comprising a substrate ( 101 ), a first electrically conductive layer ( 102 ), a light emitting layer ( 103 ), and a second electrically conductive layer ( 104 ). The light emitting device ( 100 ) further comprises at least one metal shunt ( 105 ) which is in electrical contact with said first electrically conductive layer ( 102 ). The at least one metal shunt ( 105 ) is isolated from said second electrically conductive layer ( 104 ) at least by means of a dielectric oxide layer ( 106 ). The present invention allows for the use of electrically insulating material between one or more metal shunts and a cathode layer without reducing the effective pixel area of the device.
1. A light emitting device, comprising:
a substrate,
a first electrically conductive layer,
a light emitting layer,
a second electrically conductive layer;
at least one metal shunt in electrical contact with said first electrically conductive layer, said at least one metal shunt comprising a first metal layer and being isolated from said second electrically conductive layer at least by a dielectric oxide layer, said at least one metal shunt further comprising an auxiliary metal layer arranged to facilitate the electrical contact between said first electrically conductive layer and said metal shunt, wherein said auxiliary metal layer comprises a metal selected from the group consisting of: molybdenum, aluminium, chromium, titanium nitride, copper, silver, gold, tungsten, zirconium, titanium, and hafnium.
2. A light emitting device according to claim 1 , wherein said first metal layer of said at metal shunt is selected from the group consisting of: aluminium, zirconium, titanium and gallium.
3. A light emitting device according to claim 1 , wherein said dielectric oxide layer is an oxide layer formed from said first metal layer of said metal shunt.
4. A light emitting device according to claim 1 , wherein said dielectric oxide layer is formed by anodising said first metal layer of said metal shunt.
5. A light emitting device comprising:
a substrate,
a first electrically conductive layer,
a light emitting layer,
a second electrically conductive layer;
first and second metal shunts in electrical contact with said first electrically conductive layer, said first and second metal shunts being isolated from said second electrically conductive layer at least by a dielectric oxide layer.
6. A light emitting device according to claim 5 , wherein said first metal shunt is separated from said second metal shunt by a second dielectric layer.
7. A light emitting device according to claim 6 , wherein said second dielectric layer is selected from the group consisting of SiO 2 , Si 3 N 4 and Al 2 O 3 .
8. A light emitting device according to claim 5 , wherein said first metal shunt is in electrical contact with said first electrically conductive layer, and said second metal shunt is in electrical contact with said second electrically conductive layer.
9. A light emitting device according to claim 5 , wherein said second metal shunt is arranged on top of said first metal shunt.
10. A method for manufacturing a light emitting device, comprising:
a. providing a substrate;
b. arranging a first electrically conductive layer on said substrate;
c1 arranging an auxiliary metal layer on said substrate or said first electrically conductive layer;
c2. arranging a first metal layer on said substrate or said first electrically conductive layer;
d. patterning said first metal layer to form at least one metal shunt;
e. forming a dielectric oxide layer on said first metal layer of said metal shunt;
f. arranging a light emitting layer on said first electrically conductive layer; and
g. arranging a second electrically conductive layer on said light emitting layer.
11. A method according to claim 10 , further comprising the step of patterning said auxiliary metal layer(s) by using the dielectric oxide layer formed in step e as a mask for etching said auxiliary metal layer(s).
12. A method according to claim 10 , wherein said dielectric oxide layer formed in said step e is formed by anodising said first metal layer of said metal shunt.