Tape-shaped oxide superconductor
View Patent ↗A tape-shaped oxide superconductor includes a 15 to 100 nm-thick Ce—Gd—O-based oxide layer (Ce:Gd=40:60 to 70:30 molar ratio) and a 100 nm-thick Ce—Zr—O-based oxide layer (Ce:Zr=50:50 molar ratio) as first and second intermediate layers are formed by MOD on an Ni-base alloy substrate having a half value width (FWHM:Δφ) of 6.5 degrees. A 150 nm-thick CeO 2 oxide layer as a third intermediate layer is formed on the second intermediate layer by RF sputtering. A 1 μm-thick YBCO superconducting layer is formed by TFA-MOD on the three-layer structure. In the tape-shaped oxide superconductor, the Δφ values of the first to third intermediate layers are (6.0 to 6.5) degrees, (6.0 to 6.6) degrees, and (6.0 to 6.6) degrees, respectively, and the Jc value of the YBCO superconducting layer in liquid nitrogen is 1.8 to 2.2 MA/cm 2 .
1. A tape-shaped oxide superconductor having an intermediate layer and an oxide superconducting layer provided in series onto a biaxially-oriented metallic substrate, comprising:
a three-layer structured intermediate layer including
a first intermediate layer which is formed onto said metallic substrate and comprises an oxide which has a template function,
a second intermediate layer which is formed onto said first intermediate layer and comprises an oxide which has a function which prevents diffusion to said oxide superconducting layer of an element which composes said metallic substrate, and
a third intermediate layer which is formed onto said second intermediate layer and comprises an oxide which has a function which controls an orientation of said oxide superconducting layer; and
wherein the first intermediate layer is Ce—RE 1 —O, wherein RE 1 is at least one element selected from the group consisting of Gd, Sm, Eu, Dy, Ho, and Er, and wherein a mole ratio of Ce:RE 1 of the first intermediate layer is within the range of Ce:RE 1 =40:60-70:30 and the third intermediate layer is CeO 2 .
2. A tape-shaped oxide superconductor according to claim 1 ,
wherein in-plane orientations from the first intermediate layer to the third intermediate layer are within the range of ±1.0 degree for Δφ (half value width) by X-ray diffraction of the biaxially-oriented metallic substrate.
3. A tape-shaped oxide superconductor according to claim 1 ,
wherein the first intermediate layer has a thickness within the range of 10-100 nm.
4. A tape-shaped oxide superconductor according to claim 1 ,
wherein the third intermediate layer has a thickness of 30 nm or more.
5. A tape-shaped oxide superconductor according to claim 1 ,
wherein the oxide superconducting layer has a structure of RE 3 Ba 2 Cu 3 O 7-y , wherein RE 3 is at least one element selected from the group consisting of Y, Gd, Sm, Nd, Ho, Dy, Eu, Tb, Er, and Yb.
6. A tape-shaped oxide superconductor according to claim 1 ,
wherein the second intermediate layer is formed by RE 2 —Zr—O, wherein RE 2 is at least one element selected from the group consisting of Ce, Gd, Sm, Eu, Dy, Ho, Er, and Y.
7. A tape-shaped oxide superconductor according to claim 6 ,
wherein a mole ratio of RE 2 :Zr of the second intermediate layer is within the range of RE 2 :Zr=30:70-70:30.
8. A tape-shaped oxide superconductor according to claim 7 ,
wherein the second intermediate layer has a thickness within the range of 30 nm or more.
9. A tape-shaped oxide superconductor according to claim 1 ,
wherein the first and the second intermediate layers and the oxide superconducting layer are formed by an organic metallic salt coating thermal decomposition (MOD).
10. A tape-shaped oxide superconductor according to claim 9 ,
wherein the first and the second intermediate layers and the oxide superconducting layer are formed by giving a heat-treatment after coating a mixed solution of an octylic acid salt, a naphthenate, a neodecanoic acid salt, or a trifluoroacetate which includes an element which composes the intermediate layer or the oxide superconducting layer.
11. A tape-shaped oxide superconductor according to claim 1 ,
wherein the biaxially-oriented metallic substrate is provided with a biaxially-oriented surface layer on a side which contacts at least the first intermediate layer.
12. A tape-shaped oxide superconductor according to claim 11 ,
wherein the biaxially-oriented metallic substrate is provided with a biaxially-oriented surface layer on a side which contacts at least the first intermediate layer by giving a heat-treatment after a cold rolling of Ni, Ni-base alloy, Cu, or Cu-base alloy.
13. A tape-shaped oxide superconductor according to claim 12 ,
wherein the biaxially-oriented metallic substrate comprises the Ni-base alloy which includes Ni and 0.1-15 at % of at least one element selected from the group consisting of W, Mo, Ta, V, and Cr.
14. A tape-shaped oxide superconductor, comprising:
a three-layer structured intermediate layer including a first intermediate layer, a second intermediate layer, and a third intermediate layer formed in series on a surface layer of Ni-base alloy which includes Ni and at least one element selected from the group consisting of W, Mo, Ta, V, and Cr and which is provided with a biaxially-oriented surface layer at least at a face of one side,
said first intermediate layer being Ce—Gd—O which is formed by an organic metallic salt coating thermal decomposition (MOD) and wherein a mole ratio of Ce:Gd is within the range of 40:60-70:30, said first intermediate layer having a thickness of 10-100 nm,
said second intermediate layer being Ce—Zr—which is formed by the organic metallic salt coating thermal decomposition (MOD), said second intermediate layer having a thickness of 30 nm or more and a mole ratio Ce:Zr within the range of 30:70-70:30,
said third intermediate layer being CeO 2 and having a thickness of 30 nm or more,
wherein the first intermediate layer to the third intermediate layer have in-plane orientations within the range of ±1.0 degree for Δφ (half value width) by a X-ray diffraction of a biaxially-oriented metallic substrate, and
wherein an YBa 2 Cu 3 O 7-y superconducting layer, formed by organic metallic salt coating thermal decomposition (MOD), is superimposed on the three-layered structured intermediate layer.