Light emitting device
View Patent ↗This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
1. A light emitting device comprising:
a first conductivity semiconductor layer;
an active layer; and
a second conductivity semiconductor layer, wherein the active layer comprises a plurality of quantum well layers and a plurality of barrier layers stacking alternately, and the barrier layers comprise outer barrier layers and inner barrier layers, wherein one of the outer barrier layers is closest to the first conductivity semiconductor layer and another one of the outer barrier layers is closest to the second conductivity semiconductor layer, wherein the inner barrier layers comprise at least one p-type doped barrier layer and a plurality of undoped barrier layers,
wherein the two barrier layers closest to the first conductivity semiconductor layer and the second conductivity semiconductor layer are undoped layers.
2. The light emitting device according to claim 1 , further comprising:
a substrate disposed under the second conductivity semiconductor layer; and
an electrode disposed on the first conductivity semiconductor layer.
3. The light emitting device according to claim 1 , wherein an impurity of the p-type doped barrier layer is selected from a group consisting of Be, Mg, Ba and C.
4. The light emitting device according to claim 3 , wherein the impurity is evenly distributed in the p-type doped barrier layer.
5. The light emitting device according to claim 1 , wherein materials of the first conductivity semiconductor layer, the active layer, and the second conductivity semiconductor layer comprise at least two elements selected from the group consisting of Al, Ga, In, N, P and As.
6. The light emitting device according to claim 3 , wherein the impurity is evenly distributed in a specific region of the p-type doped barrier layer.
7. The light emitting device according to claim 3 , wherein the impurity of the p-type doped barrier layer is Delta doped.
8. The light emitting device according to claim 1 , wherein the at least one p-type doped barrier layer is disposed closer to the first conductivity semiconductor layer than the second conductivity semiconductor layer.
9. The light emitting device according to claim 1 , wherein the at least one p-type doped barrier layers is disposed closer to the second conductivity semiconductor layer than the first conductivity semiconductor layer.
10. The light emitting device according to claim 1 , wherein the at least one p-type doped barrier layer is disposed in the middle of the active layer.
11. A light emitting device comprising:
a first conductivity semiconductor layer;
an active layer; and
a second conductivity semiconductor layer, wherein the active layer comprises a plurality of quantum well layers and a plurality of barrier layers stacking alternately, and the barrier layers comprise outer barrier layers and inner barrier layers, wherein one of the outer barrier layers is closest to the first conductivity semiconductor layer and another one of the outer barrier layers is closest to the second conductivity semiconductor layer, wherein the inner barrier layers comprise a plurality of undoped barrier layers and at least one p-type doped barrier layer located between the undoped barrier layers,
wherein the two barrier layers closest to the first conductivity semiconductor layer and the second conductivity semiconductor layer are undoped layers.