Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
View Patent ↗A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
1. A method of manufacturing a thin-film transistor comprising:
forming a gate electrode on a base substrate;
forming a gate insulation layer on the substrate to cover the gate electrode;
forming an active layer on the gate insulation layer to cover the gate electrode;
forming a buffer layer on the active layer to suppress oxidation of the active layer, the buffer layer comprising a first connection layer;
forming the first connection layer using at least a first gas in a deposition process;
gradually increasing a flow rate of the first gas as the deposition process progresses;
primarily etching first predefined portions of the buffer layer and the active layer;
forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and
secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode.
2. The method of claim 1 , wherein the buffer layer comprises a plurality of layers formed by an in-situ process on the active layer.
3. The method of claim 1 , wherein the buffer layer further comprises a second connection layer and a third connection layer.
4. The method of claim 1 , wherein the active layer comprises silicon.
5. The method of claim 3 , wherein the first connection layer comprises titanium silicide, wherein the second connection layer comprises titanium, and wherein the third connection layer comprises titanium nitride.
6. The method of claim 5 , wherein the first connection layer is formed by introducing hydrogen gas, silane gas, and titanium chloride gas into a chamber, wherein the second connection layer is formed by introducing hydrogen gas and titanium chloride gas into the chamber, and wherein the third connection layer is formed by introducing hydrogen gas, titanium chloride gas, and ammonia gas into the chamber.
7. The method of claim 6 , wherein a flow rate of the silane gas is gradually decreased and a flow rate of the titanium chloride gas is gradually increased when forming the first connection layer, and wherein a flow rate of the titanium chloride gas is gradually decreased and a flow rate of the ammonia gas is gradually increased when forming the third connection layer.
8. The method of claim 3 , wherein the first connection layer comprises molybdenum silicide, wherein the second connection layer comprises molybdenum, and wherein the third connection layer comprises molybdenum nitride.
9. The method of claim 8 , wherein the first connection layer is formed by introducing hydrogen gas, silane gas, and molybdenum chloride gas into a chamber, wherein the second connection layer is formed by introducing hydrogen gas and molybdenum chloride gas into the chamber, and wherein the third connection layer is formed by introducing hydrogen gas, molybdenum chloride gas, and ammonia gas into the chamber.
10. The method of claim 9 , wherein a flow rate of the silane gas is gradually decreased and a flow rate of the molybdenum chloride gas is gradually increased when forming the first connection layer, and wherein a flow rate of the molybdenum chloride gas is gradually decreased and a flow rate of the ammonia gas is gradually increased when forming the third connection layer.
11. The method of claim 1 , further comprising:
primarily etching the buffer layer, resulting in a primarily etched buffer layer; and
using the primarily etched buffer layer as a mask, primarily etching the active layer.
12. The method of claim 1 , wherein the buffer layer is primarily etched using a chlorine-containing gas.
13. The method of claim 1 , wherein etching the first the active layer is primarily etched using a fluorine-containing gas.
14. The method of claim 13 , wherein the active layer comprises a semiconductor layer and an impurity layer, and wherein the active layer is secondarily etched on predefined portions of the impurity layer.
15. The method of claim 1 , wherein
the active layer includes a first material, and
the buffer layer includes a second material that reacts with the first material in the active layer to form a compound.
16. The method of claim 1 , wherein a content ratio changes continuously along a thickness of the buffer layer.
17. A method of manufacturing a thin-film transistor comprising:
forming a gate electrode on a base substrate;
forming a gate insulation layer on the substrate to cover the gate electrode;
forming an active layer on the gate insulation layer to cover the gate electrode;
forming a buffer layer on the active layer to suppress oxidation of the active layer, the buffer layer including at least a connection layer;
forming the connection layer using at least a first gas in a deposition process;
gradually decreasing a flow rate of the first gas as the deposition process progresses;
primarily etching first predefined portions of the buffer layer and the active layer;
forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and
secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode.
18. The method of claim 17 , wherein the first gas is a silane gas.
19. The method of claim 17 , wherein the first gas is a titanium chloride gas.
20. The method of claim 17 , wherein the first gas is a molybdenum chloride gas.
21. The method of claim 17 , further comprising gradually increasing a flow rate of a titanium chloride gas when forming the connection layer.
22. The method of claim 17 , further comprising gradually increasing a flow rate of an ammonia gas when forming the connection layer.
23. The method of claim 17 , further comprising gradually increasing a flow rate of a molybdenum chloride gas when forming the connection layer.