SOLAR CELL AND METHOD OF FABRICATING THE SAME
A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (In x Ga 1-x N). The transparent electrode layer is disposed on the buffer layer.
1 . A solar cell comprising:
a metal electrode layer on a substrate;
an optical absorption layer on the metal electrode layer;
a buffer layer on the optical absorption layer, the buffer layer comprising an indium gallium nitride (In x Ga 1-x N, 0<X<1); and
a transparent electrode layer on the buffer layer.
2 . The solar cell of claim 1 , wherein the parameter X in the In x Ga 1-x N decreases with increasing a distance from the optical absorption layer.
3 . The solar cell of claim 1 , wherein an energy band gap of the In x Ga 1-x N is a value between energy band gaps of the optical absorption layer and the transparent electrode layer, the energy band gap of the In x Ga 1-x N increasing as a distance from the optical absorption layer increases.
4 . The solar cell of claim 1 , further comprising a seed layer between the buffer layer and the optical absorption layer.
5 . The solar cell of claim 4 , wherein the seed layer is formed of an indium nitride (InN).
6 . The solar cell of claim 1 , wherein the optical absorption layer comprises one of chalcopyrite compound semiconductors selected from a group consisting of CuInSe, CuInSe 2 , CuInGaSe, and CuInGaSe 2 .
7 . A method of fabricating a solar cell, comprising:
forming a metal electrode layer on a substrate;
forming an optical absorption layer on the metal electrode layer;
forming a buffer layer on the optical absorption layer, the buffer layer comprising an In x Ga 1-x N (0<X<1); and
forming a transparent electrode layer on the buffer layer.
8 . The method of claim 7 , wherein the buffer layer is formed through the same method as the optical absorption layer.
9 . The method of claim 7 , wherein the buffer layer is formed through a co-evaporation method.
10 . The method of claim 9 , wherein the optical absorption layer is formed by co-evaporating indium (In), copper (Cu), selenium (Se), gallium (Ga) and nitrogen (N), and the buffer layer is formed by co-evaporating In, Ga, and N.
11 . The method of claim 7 , wherein the parameter X in the In x Ga 1-x N is controlled to decrease with increasing a distance from the optical absorption layer.
12 . The method of claim 7 , wherein the In x Ga 1-x N is formed to have an energy band gap increasing with a distance from the optical absorption layer.
13 . The method of claim 7 , further comprising forming a seed layer between the In x Ga 1-x N and the optical absorption layer, wherein the forming of the seed layer comprises alternately evaporating Se and N to perform a nitrogen treatment on a surface of the optical absorption layer, and forming an indium nitride (InN) by reacting N and In on the surface of the optical absorption layer.
14 . The method of claim 7 , wherein the buffer layer and the transparent layer have the same crystal structure.
15 . The method of claim 7 , wherein the substrate is loaded onto cluster equipment comprising a sputtering chamber and a co-evaporation chamber, wherein the metal electrode layer and the transparent electrode layer are formed within the sputtering chamber and the optical absorption layer and the buffer layer are formed within the co-evaporation chamber.