Photovoltaic device with back side contacts
View Patent ↗Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.
1. A photovoltaic (PV) device, comprising:
a window layer exposed to a light source;
an absorber layer disposed above the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; wherein the absorber layer comprises a base layer and an emitter layer; wherein the base layer consists of a single group III-V compound semiconductor material and wherein the emitter layer is made of a different material than the base layer, such that a heterojunction is formed between the emitter layer and the base layer, and
a plurality of contacts for external connection coupled to the absorber layer, such that the contacts for external connection are disposed above the absorber layer on the back side of the PV device and do not block the photons from reaching the absorber layer through the window layer and n-contacts of the plurality of contacts are disposed within recesses formed within the emitter layer, wherein sidewalls of the recesses are passivated in order to reduce dark current in the PV unit.
2. The PV device of claim 1 , wherein the emitter layer comprises a group III-V semiconductor.
3. The PV device of claim 2 , wherein the group III-V semiconductor is monocrystalline.
4. The PV device of claim 1 , wherein the base layer is disposed above the window layer; and
the emitter layer is disposed above the base layer such that the window layer is closer to the base layer than it is to the emitter layer.
5. The PV device of claim 1 , wherein the base layer is n-doped.
6. The PV device of claim 5 , wherein the base layer consists of n-GaAs.
7. The PV device of claim 1 , wherein the emitter layer is p + -doped.
8. The PV device of claim 7 , wherein the emitter layer comprises p + -AlGaAs.
9. The PV device of claim 4 , wherein the plurality of contacts comprise:
a plurality of n-contacts coupled to the base layer; and
a plurality of p-contacts coupled to the emitter layer.
10. The PV device of claim 1 , wherein the lateral surfaces are passivated with SiN, SiOx, TiOx, TaOx, ZnS, or any combination thereof.
11. The PV device of claim 1 , wherein the plurality of contacts comprise Pd/Ge.
12. The PV device of claim 1 , wherein the PV device has a width of about 2 cm.
13. The PV device of claim 1 , wherein the PV device has a length of about 10 cm.
14. The PV device of claim 1 , wherein the photons travel through the window layer on a front side of the PV device and all of the plurality of contacts are disposed on a back side of the PV device, opposite from the front side.