Integration of a photovoltaic device
Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit may have all electrical contacts positioned on the back side of the PV device to avoid shadowing and increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer formed at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
1. A photovoltaic (PV) device, comprising:
a plurality of PV units, wherein each PV unit comprises:
a window layer exposed to a light source;
an absorber layer disposed above the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; wherein the absorber layer comprises a base layer and an emitter layer; wherein the base layer consists of a single group III-V compound semiconductor material and wherein the emitter layer is made of a different material than the base layer, such that a heterojunction is formed between the emitter layer and the base layer, and
a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed above the absorber layer, and do not block any of the photons from reaching the absorber layer through the window layer, and n-contacts of the plurality of contacts are disposed within recesses formed within the emitter layer, wherein sidewalls of the recesses are passivated in order to reduce dark current in the PV unit; and
a plurality of electrically conductive connections, each of the plurality of electrically conductive connections comprising a strip for connecting the plurality of contacts among the plurality of PV units.
2. The PV device of claim 1 , wherein the emitter layer comprises a group III-V semiconductor.
3. The PV device of claim 2 , wherein the group III-V semiconductor is monocrystalline.
4. The PV device of claim 1 , wherein the base layer is disposed above the window layer; and
the emitter layer is disposed above the base layer such that the window layer is closer to the base layer than it is to the emitter layer.
5. The PV device of claim 1 , wherein the base layer consists of n-GaAs.
6. The PV device of claim 4 , wherein the emitter layer is p + -doped.
7. The PV device of claim 6 , wherein the emitter layer comprises p + -AlGaAs.
8. The PV device of claim 1 , wherein the plurality of contacts comprise:
a plurality of n-contacts coupled to the base layer; and
a plurality of p-contacts coupled to the emitter layer.
9. The PV device of claim 8 , wherein the plurality of electrically conductive connections comprises:
a first plurality of conductive connections for connecting the plurality of n-contacts among the PV units; and
a second plurality of conductive connections for connecting the plurality of p-contacts among the PV units.
10. The PV device of claim 9 , wherein the first plurality of conductive connections comprises a different material than the second plurality of conductive connections.
11. The PV device of claim 1 , where the plurality of electrically conductive connections comprises a conductive polymer.
12. The PV device of claim 1 , where the plurality of electrically conductive connections comprises a metal or a metal alloy.
13. A photovoltaic (PV) device, comprising:
a first PV unit;
a second PV unit;
a third PV unit, wherein each of the first, second, and third PV units comprises:
a window layer exposed to a light source;
an n-doped base layer disposed below the window layer;
a p + -doped emitter layer disposed below the n-doped base layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer; wherein the base layer consists of a single group III-V compound semiconductor material and wherein the emitter layer is made of a different material than the base layer, such that a heterojunction is formed between the emitter layer and the base layer,
a plurality of n-contacts coupled to the base layer and disposed within recesses formed within the emitter layer such that the plurality of n-contacts does not block the photons from reaching the p-n layer through the window layer, wherein sidewalls of the recesses are passivated in order to reduce dark current in the PV unit; and
a plurality of p-contacts coupled to the emitter layer and disposed below the emitter layer such that the plurality of p-contacts does not block the photons from reaching the p-n layer through the window layer;
a first electrically conductive connection comprising a first strip for connecting the n-contacts of the first and second PV units together; and
a second electrically conductive connections comprising a second strip for connecting the p-contacts of the second and third PV units together.
14. The PV device of claim 13 , wherein the emitter layer comprises a group III-V semiconductor.
15. The PV device of claim 14 , wherein the group III-V semiconductor is monocrystalline.
16. The PV device of claim 13 , wherein the base layer consists n-GaAs.
17. The PV device of claim 13 , wherein the emitter layer comprises p + -AlGaAs.
18. The PV device of claim 13 , wherein the first conductive connections comprises a different material than the second conductive connection.
19. The PV device of claim 13 , where the first or the second electrically conductive connections comprises a conductive polymer.
20. The PV device of claim 13 , where the first or the second electrically conductive connections comprises a metal or a metal alloy.