IP Library Granted Patent US 8,517,600
Granted Patent B2
US 8,517,600 · App. 12/606,325 · Granted Aug 27, 2013

Deposition sensor based on differential heat transfer resistance

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Quick Facts
Patent No.
US 8,517,600
App. No.
12/606,325
Granted
Aug 27, 2013
Kind
B2
Abstract

A system and method are disclosed wherein differential heat transfer resistances are used to effectively and efficiently detect the early onset of deposit accumulation in industrial fluid processes and fluid transport vehicles. According to one embodiment, a probe is provided in conjunction with a heat source, a water source and a probe. The probe is comprised of a heat transfer surface, a first part of which is covered only by a thin metal layer. The second or remaining portion of the heat transfer surface is covered by a heat flux sensor and a thin metal layer. The metal layers of both the first and second areas of the probe are connected, and water flows across the full heat transfer surface. Deposition forms on a portion of the heat transfer surface as a result of slow water flow and elevated water temperature. The temperatures of the heat source, water source, and heat flux are measured. The deposition rate as a rate of change of heat transfer resistance is measured.

Claims (10)

1. A system for measuring deposition rate comprising a probe having:

i) a heat transfer surface defining a first portion and a second portion;

ii) a heat flux sensor covering said second portion of the heat transfer surface;

iii) a thin metal layer covering said heat flux sensor and said first portion of said heat transfer surface;

iv) a heat source operatively associated with said probe and adapted to supply heat to said heat transfer surface;

v) a water source operatively associated with said probe and adapted to provide a flow of water along said heat transfer surface, wherein water flows from a small cross-sectional area contacting the first portion of the heat transfer surface to a larger cross sectional area contacting the second portion of the heat transfer surface, said probe being configured to measure the temperature of the heat source (Th), the temperature of the water source (Tw), and the heat flux at the larger cross sectional area (F2) and calculating the deposition rate as the rate of change of heat transfer resistance expressed according to the formula (Th)−(Tw)/(F2).

2. The system of claim 1 comprising two probes, wherein one probe has a low power supply heat source and the other has a high power supply heat source.

3. The system of claim 2 wherein the deposition rate is calculated as a rate of change of differential heat transfer resistance according to the formula:

( Th — h−Tw — h )/ F — h −( Th — l−Tw — l )/ F — l

wherein Th_h is the temperature of the heat source of a first of the two probes, Tw_h is the temperature of the water source of the first of the two probes, and F_h is the heat flux of the first of the two probes, Th_l is the temperature of the heat source of a second of the two probes, Tw_l is the temperature of the water source of the second of the two probes, and F —1 is the heat flux of the second of two probes.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2018
From: GENERAL ELECTRIC COMPANY
To: BL TECHNOLOGIES, INC.
Reel/Frame 047502/0065 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2009
From: WAN, ZHAOYANG; XIAO, CAIBIN
To: GENERAL ELECTRIC COMPANY
Reel/Frame 023604/0887 →