Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
View Patent ↗A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.
1. A process for refining metallurgical grade silicon in a reactor including a heat zone and means for controlling the temperature and pressure in the reactor, said process reducing the levels of impurities including at least one of phosphorus and boron impurities in the metallurgical grade silicon and comprising the steps of:
A) selecting a calcium-based agent for reducing a level of the at least one of the phosphorous and boron impurities,
B) loading the silicon and the selected agent into a crucible to produce a mixture,
C) placing the loaded crucible into the reactor heat zone,
D) refining the mixture of the silicon and the selected agent by elevating the temperature in the reactor heat zone to at least the melting point for the mixture in a non-oxidizing environment at a pressure of 50-100 bar, and then further reducing the pressure in the reactor heat zone to cause and control bubbling in the melted mixture thereby to produce a melted refined material, and
E) thereafter directionally solidifying the melted refined material produced in step D) in the same crucible and reactor thereby to segregate impurities during said directional solidification whereupon there is produced silicon with reduced levels of impurities including the at least one impurity of phosphorus and boron.
2. A process as recited in claim 1 wherein said selection of an agent includes selecting calcium disilicide as the agent.
3. A process as recited in claim 1 wherein said refining includes, as an initial step, properly conditioning the reactor and crucible to prevent interactions between the selected agent and any impurities in the heat zone.
4. A process as recited in claim 3 wherein said conditioning includes evacuating the heat zone and elevating the heat zone temperature.
5. A process as recited in claim 3 wherein said refining includes the step of purging the heat zone with an inert gas after said conditioning.
6. A process as recited in claim 3 wherein said refining includes the step of purging the heat zone by backfilling of the heat zone with argon.
7. A process as recited in claim 6 wherein said step of directionally solidifying includes cooling.
8. A process as recited in claim 1 wherein the metallurgical silicon additionally includes aluminum as an impurity and said selection of a calcium-based agent includes selecting calcium disilicide as the agent.
9. A process as recited in claim 1 wherein said directional solidification segregates impurities which are found in the last material to freeze.
10. A process as recited in claim 1 wherein the metallurgical silicon includes titanium impurities.
11. A process as recited in claim 3 wherein said refining includes the step of purging the heat zone with an inert gas after said conditioning by backfilling the heat zone with an inert gas to increase the pressure before increasing the temperature above the melting point of the mixture of the metallurgical silicon and the selected agent.
12. A process as recited in claim 3 wherein said refining includes the step of purging the heat zone after said conditioning by backfilling the heat zone with argon to increase the pressure before increasing the temperature above the melting point of the mixture of the metallurgical silicon and the selected agent.
13. A process for refining metallurgical grade silicon that includes at least one impurity of phosphorous, boron or aluminum, said process occurring in a reactor including a heat zone and means for controlling the temperature and pressure in the reactor and including the steps of:
A) mixing the silicon with calcium disilicide,
B) refining the mixed silicon and calcium disilicide in the reactor in a non-oxidizing environment at an elevated temperature that melts the silicon and at a reduced pressure that causes and controls bubbling due to volatilization of the calcium disilicide whereby during volatilization under the reduced pressure impurities are removed from the mix thereby to produce a refined material; and
C) upon quiescence of the mix in step B) directionally solidifying the refined material in the same reactor thereby to segregate impurities from the refined material.
14. A process for refining metallurgical grade silicon in a reactor that includes a heat zone and means for controlling the temperature and pressure in the reactor to remove a plurality of impurities including phosphorous from the metallurgical grade silicon and comprising the steps of:
A) loading the silicon and calcium disilicide into a crucible to produce a mixture,
B) placing the loaded crucible into the reactor heat zone,
C) refining the mixture of the silicon and calcium disilicide by elevating the temperature in the reactor heat zone to at least the melting point for the mixture in a non-oxidizing environment at a pressure of 50-100 bar, and then further reducing the pressure in the reactor heat zone to produce a melted refined material, and
D) thereafter directionally solidifying the melted refined material produced in step C) in the same crucible and reactor thereby to segregate impurities during said directional solidification whereupon there is produced silicon with reduced levels of phosphorus.
15. A process for refining metallurgical grade silicon in a reactor that includes a heat zone and means for controlling the temperature and pressure in the reactor to remove a plurality of impurities including phosphorous, boron and aluminum as impurities from the metallurgical grade silicon and comprising the steps of:
A) loading the silicon and calcium disilicide into a crucible to produce a mixture,
B) placing the loaded crucible into the reactor heat zone,
C) refining the mixture of the silicon and calcium disilicide by elevating the temperature in the reactor heat zone to at least the melting point for the mixture in a non-oxidizing environment at a pressure of 50-100 bar and then further reducing the pressure in the reactor heat zone to produce a melted refined material, and
D) thereafter directionally solidifying the melted refined material produced in step C) in the same crucible and reactor thereby to segregate impurities during said directional solidification whereupon there is produced silicon with reduced levels of phosphorus, boron and aluminum.