Nitride semiconductor device and method for manufacturing the same
View Patent ↗A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.
1. A method for manufacturing a nitride semiconductor device comprising the steps of:
forming a first nitride semiconductor layer on a principal surface of a substrate;
forming one or more convex portions in at least a top portion of the first nitride semiconductor layer; and
selectively growing a second nitride semiconductor layer on the side surfaces of the one or more convex portions of the first nitride semiconductor layer in a direction substantially parallel to the principal surface of the substrate, after the step of forming the one or more convex portions, wherein in the step of selectively growing the second nitride semiconductor layer, the second nitride semiconductor layer is grown mainly on side surfaces of the one or more convex portions of the first nitride semiconductor layer, and is hardly grown on a surface substantially parallel to the principal surface of the substrate.
2. The method of claim 1 , wherein
the side surfaces of the one or more convex portions of the first nitride semiconductor layer have a (000−1), (11−20) or (1−100) plane orientation.
3. The method of claim 1 , wherein
the first and second nitride semiconductor layers have a p-type conductivity, and at least one of phosphorus and arsenic is added to the second nitride semiconductor layer during the step of forming the second nitride semiconductor layer.
4. The method of claim 3 , wherein
an organic phosphorus material is used as a phosphorus source and an organic arsenic material is used as an arsenic source in the step of forming the second nitride semiconductor layer.
5. The method of claim 1 , wherein
in the step of forming the first nitride semiconductor layer on the substrate, the principal surface of the substrate has a (000−1), (11−20) or (1−100) plane orientation, and
wherein in the step of growing the second nitride semiconductor layer, an organic nitride material is used as a nitrogen source after the step of forming the first nitride semiconductor layer.
6. The method of claim 5 , wherein
the first and second nitride semiconductor layers have a p-type conductivity, and at least one of phosphorus and arsenic is added to the second nitride semiconductor layer in the step of forming the second nitride semiconductor layer.
7. The method of claim 6 , wherein
an organic phosphorus material is used as a phosphorus source, and an organic arsenic material is used as an arsenic source in the step of forming the second nitride semiconductor layer.
8. The method of claim 5 , wherein the organic nitride material is asymmetric dimethylhydrazine or asymmetric dibutylhydrazine.
9. The method of claim 1 , wherein
in the step of selectively growing the second nitride semiconductor layer, a growth direction of the second nitride semiconductor layer is substantially parallel to the principal surface of the substrate in the substantially entire region of the second nitride semiconductor layer.
10. The method of claim 1 , wherein
in the step of selectively growing the second nitride semiconductor layer, an organic nitride material is used as a nitrogen source.
11. The method of claim 10 , wherein
the organic nitride material is asymmetric dimethylhydrazine or asymmetric dibutylhydrazine.
12. The method of claim 1 , wherein
dislocations in the second nitride semiconductor layer extend in the direction substantially parallel to the principal surface of the substrate.