Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film
View Patent ↗A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less.
1. An apparatus, comprising:
an irradiation device configured to apply an energy beam to light-shielding elements arranged between a preformed semiconductor thin film and an energy beam irradiating source and grow a crystal in a defined direction with a light-shielded region of the preformed semiconductor thin film as a starting point.
2. The apparatus of claim 1 , wherein the light-shielding elements are light-shielding masks obtained by formation of a light-shielding pattern on a transparent substrate and a ratio between a light-shielding width of the light-shielding pattern and a pitch of the light-shielding pattern is one or more.
3. The apparatus of claim 2 , wherein the light-shielding width of the light-shielding pattern is 0.3 μm or more.
4. The apparatus of claim 1 , wherein the irradiation device includes a projection exposure unit configured to irradiate the energy beam as a pulse and concurrently cause a melting and a re-crystallization on surfaces of the preformed semiconductor thin film.
5. The apparatus of claim 2 , wherein the ratio of the pitch to the light-shielding width is at least one.
6. The apparatus of claim 1 , wherein the irradiation device includes an optical system with a resolution of 4 μm or less.
7. The apparatus of claim 1 , wherein the irradiation device is configured to apply the energy beam to create a local temperature gradient in the light-shielded region of at least 300° C./μm.
8. The apparatus of claim 1 , wherein the irradiation device is configured to apply the energy beam to the light-shielded region with an intensity gradient of at least 220 mJ/cm 2 /μm.
9. The apparatus of claim 1 , wherein the irradiation device is configured to generate a two-directional temperature gradient in the light-shielded region and cause the crystal to grow in two directions with the light-shielded region in the preformed semiconductor thin film as the starting point.
10. The apparatus of claim 1 , wherein a thickness of the crystal at the starting point is smaller than a thickness of the crystal at a terminating point.
11. An apparatus, comprising:
an irradiation device configured to apply an energy beam to a semiconductor thin film using a gate electrode formed with a gate insulating film interposed between the gate electrode and a preformed semiconductor thin film as a light-shielding element and cause a crystal to grow in a direction with a light-shielded region of the preformed semiconductor thin film as a starting point.
12. The apparatus of claim 11 , wherein a light-shielding width of the light-shielding element is at least 0.3 μm.
13. The apparatus of- claim 11 , wherein the irradiation device includes a projection exposure unit configured to apply the energy beam with pulse irradiation and cause surfaces of the preformed semiconductor thin film to concurrently melt and re-crystallize.
14. The apparatus of claim 11 , wherein the irradiation device includes an optical system with a resolution of 4 μm or less.
15. The apparatus of claim 11 , wherein the irradiation device is configured to apply the energy beam to create a local temperature gradient in the light-shielded region of at least 300° C./μm.
16. The apparatus of claim 11 , wherein the irradiation device is configured to apply the energy beam to the light-shielded region with an intensity gradient of at least 220 mJ/cm2/μm.
17. The apparatus of claim 11 , wherein the irradiation device is configured to generate a two-directional temperature gradient in the light-shielded region and cause the crystal to grow in two directions with the light-shielded region in the preformed semiconductor thin film as the starting point.
18. The apparatus of claim 11 , wherein a thickness of the crystal at the starting point is smaller than a thickness of the crystal at a terminating point.
19. An apparatus comprising:
means for applying an energy beam to light-shielding elements arranged between a preformed semiconductor thin film and an energy beam irradiating source; and
means for causing a crystal to grow in a specified direction with a light-shielded region of the preformed semiconductor thin film as a starting point.
20. The apparatus of claim 19 , further comprising:
means for forming a light shielding mask including means for forming a light-shielding pattern on a transparent substrate and means for maintaining a ratio (P/L) of at least one between a pitch P of the light-shielding pattern and a light-shielding width L of the light-shielding pattern, and
wherein the means for applying the energy beam includes means for applying the energy beam to the light-shielding mask.
21. The apparatus of claim 20 , wherein the light-shielding width of the light-shielding pattern is at least 0.3 μm.
22. The apparatus of claim 20 , wherein the means for applying the energy includes means for applying an irradiated pulse of the energy beam, and further comprising:
means for concurrently melting and re-crystallizating surfaces of the preformed semiconductor thin film.
23. The apparatus of claim 20 , further comprising:
means for creating a local temperature gradient in the light-shielded region of at least 300° C./μm.