Resist pattern protection technique for double patterning application
View Patent ↗Methods of patterning a material are disclosed. A first resist pattern is formed on a field. A protective layer is formed over the first resist pattern and at least a portion of the field. A second resist pattern is formed over a portion of the protective layer. A portion of a material to be patterned deposited adjacent to the first and second resist patterns is removed.
1. A method of patterning a hard mask, the method comprising:
forming a first resist pattern over a field;
depositing a protective layer over the first resist pattern and at least a first portion of the field;
forming a second resist pattern over at least a portion of the protective layer, the protective layer protecting the first resist pattern from a patterning process used to form the second resist pattern;
depositing a hard mask material over the first and second resist patterns and at least a second portion of the field not covered by the first and second resist patterns; and
forming a patterned hard mask by removing a portion of the hard mask material deposited over the first and second resist patterns,
wherein the field comprises an aluminum oxide (Al 2 O 3 ) layer to be etched via the patterned hard mask, and the Al 2 O 3 layer is part of a writer structure associated with a perpendicular magnetic recording (PMR) write head.
2. The method of claim 1 , wherein the first resist pattern comprises an anchoring portion and a nose portion, the nose portion having a rectangular shape and extending from the anchoring portion.
3. The method of claim 2 , wherein the second resist pattern comprises a portion having a substantially triangular shape at least partially covering the anchoring portion of the first resist pattern.
4. The method of claim 3 , wherein the patterned hard mask comprises an opening having a triangular-shaped portion and a rectangular-shaped portion extending from the triangular-shaped portion.
5. The method of claim 1 , wherein the protective layer comprises a material selected from the group consisting of silicon nitride, tantalum, and aluminum oxide.
6. The method of claim 1 , wherein the protective has a thickness in a range of between about 10 and 100 angstroms.
7. The method of claim 1 , wherein the protective layer covers a lateral side of the first resist pattern.
8. The method of claim 1 , wherein the hard mask material comprises ruthenium.
9. A method of patterning a hard mask, the method comprising:
forming a first resist pattern over a field;
depositing a protective layer over the first resist pattern and at least a first portion of the field;
forming a second resist pattern over at least a portion of the protective layer, the protective layer protecting the first resist pattern from a patterning process used to form the second resist pattern;
depositing a hard mask material over the first and second resist patterns and at least a second portion of the field not covered by the first and second resist patterns; and
forming a patterned hard mask by removing a portion of the hard mask material deposited over the first and second resist patterns,
wherein the removing comprises performing a lift off operation, the lift-off operation comprises subjecting the first and second resist patterns to a wet etching operation, and the removing further comprises performing an ion milling operation to expose sides of the first and second resist patterns prior to subjecting the first and second resist patterns to the wet etching operation.