Semiconductor electroluminescent device with a multiple-quantum well layer formed therein
View Patent ↗Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
1. A semiconductor electroluminescent device comprising: a substrate; and
a multiple-quantum well layer formed above the substrate, the multiple-quantum well layer including In 1-x-y Ga x Al y As-based well layers and In 1-x-y Ga x Al y As-based barrier layers which are alternately disposed,
the well layers each having tensile strain,
the barrier layers each having compressive strain,
wherein (1−x−y) is 0.21-0.44, and
wherein the semiconductor electroluminescent device is configured to output light having a wavelength in a 1.3 μm band;
wherein a magnitude of an interface strain at an interface between each of the well layers and each of the barrier layers is smaller than a magnitude of a critical interface strain as determined by a layer thickness value, which is the larger of a thickness of the well layer and a thickness of the barrier layer adjacent to each other with the interface therebetween, and
wherein the magnitude of the critical interface strain is determined based on a largest strain amount, the largest strain amount being determined by Matthews' formula.
2. The semiconductor electroluminescent device according to claim 1 , wherein the magnitude of the critical interface strain is 0.7 times the largest strain amount, the largest strain amount being determined by Matthews' formula.
3. The semiconductor electroluminescent device according to claim 2 , wherein the magnitude of the interface strain is 0.7%-2.2%.
4. The semiconductor electroluminescent device according to claim 1 , wherein a magnitude of average strain of the multiple-quantum well layer is smaller than a magnitude of critical average strain, the magnitude of the critical average strain being determined by a layer thickness value of the entire multiple-quantum well layer.
5. The semiconductor electroluminescent device according to claim 4 , wherein the magnitude of the critical average strain is determined based on a largest strain amount, the largest strain amount being determined by Matthews' formula.
6. The semiconductor electroluminescent device according to claim 1 , wherein x is greater than or equal to 0, y is between (0.43-0.35x) and (0.476-1.017x), inclusive.
7. The semiconductor electroluminescent device according to claim 6 , wherein a number of the well layers is 5 or larger.
8. A semiconductor electroluminescent device comprising:
a substrate; and
a multiple-quantum well layer formed above the substrate, the multiple-quantum well layer including In 1-x Ga x As y P 1-y -based well layers and In 1-x Ga x As y -based barrier layers which are alternately disposed,
the well layers each having tensile strain,
the barrier layers each having compressive strain,
wherein (1−x) is 0.4-0.6 and (1−y) is 0.09-0.35, and
wherein the semiconductor electroluminescent device is configured to output light having a wavelength in a 1.3 μm band;
wherein a magnitude of an interface strain at an interface between each of the well layers and each of the barrier layers is smaller than a magnitude of a critical interface strain as determined by a layer thickness value, which is the larger of a thickness of the well layer and a thickness of the barrier layer adjacent to each other with the interface therebetween, and
wherein the magnitude of the critical interface strain is determined based on a largest strain amount, the largest strain amount being determined by Matthews' formula.
9. The semiconductor electroluminescent device according to claim 8 , wherein the magnitude of the critical interface strain is 0.7 times the largest strain amount, the largest strain amount being determined by Matthews' formula.
10. The semiconductor electroluminescent device according to claim 9 , wherein the magnitude of the interface strain is 0.7%-2.2%.
11. The semiconductor electroluminescent device according to claim 8 , wherein a magnitude of average strain of the multiple-quantum well layer is smaller than a magnitude of critical average strain, the magnitude of the critical average strain being determined by a layer thickness value of the entire multiple-quantum well layer.
12. The semiconductor electroluminescent device according to claim 11 , wherein the magnitude of the critical average strain is determined based on a largest strain amount, the largest strain amount being determined by Matthews' formula.
13. The semiconductor electroluminescent device according to claim 8 , wherein x is greater than or equal to 0, and y is between (0.384-0.33x) and (0.476-1.017x), inclusive.
14. The semiconductor electroluminescent device according to claim 13 , wherein a number of the well layers is 5 or larger.
15. The semiconductor electroluminescent device according to claim 1 , which has a ridge stripe structure.
16. The semiconductor electroluminescent device according to claim 15 , which has a ridge stripe width of 3 μm or smaller.
17. The semiconductor electroluminescent device according to claim 15 , further comprising a Fabry-Perot laser unit.
18. The semiconductor electroluminescent device according to claim 15 , further comprising a distributed feedback grating.
19. A semiconductor electroluminescent device comprising: a substrate;
a multiple-quantum well layer formed above the substrate, the multiple-quantum well layer including In 1-x-y Ga x Al y As-based well layers and In 1-x-y Ga x Al y As-based barrier layers which are alternately disposed;
a p-type InP layer formed over the multiple-quantum well; and
a p-type electrode formed over the p-type InP layer;
wherein the well layers each having tensile strain, and the barrier layers each having compressive strain,
wherein the semiconductor electroluminescent device is configured to output light having a wavelength in a 1.3 μm band,
wherein a operation current injects from the p-type electrode, and
wherein a magnitude of interface strain at an interface between each of the well layers and each of the barrier layers is smaller than a magnitude of a critical interface strain as determined by a layer thickness value, which is the larger of a thickness of the well layer and a thickness of the barrier layers adjacent to each other with the interface therebetween.