Tunneling magnetic sensing element including MGO film as insulating barrier layer
View Patent ↗A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.
1. A tunneling magnetic sensing element comprising:
a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below,
wherein the insulating barrier layer is made only of Mg—O,
the underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru, and
the average thickness of the underlayer is equal to or larger than 10 Å and equal to or smaller than 100 Å.
2. The tunneling magnetic sensing element according to claim 1 , wherein the seed layer is made of Ni—Fe—Cr.