Extremely stretchable electronics
In embodiments, the present invention may attach at least two isolated electronic components to an elastomeric substrate, and arrange an electrical interconnection between the components in a boustrophedonic pattern interconnecting the two isolated electronic components with the electrical interconnection. The elastomeric substrate may then be stretched such that the components separate relative to one another, where the electrical interconnection maintains substantially identical electrical performance characteristics during stretching, and where the stretching may extend the separation distance between the electrical components to many times that of the unstretched distance.
1. A stretchable electrical interconnect, comprising:
an electrical interconnect for connecting two electrical contacts, said electrical interconnect arranged boustrophedonicially to define rungs between said contacts, said rungs being substantially parallel with one another, and a plurality of said rungs having substantially the same length and displacement therebetween,
wherein the ratio of said length of said plurality of said rungs and said displacement between said plurality of said rungs is at least 10:1; and
wherein the electrical interconnect is made from a semiconductor material.
2. The stretchable electrical interconnect of claim 1 , wherein said rungs are substantially perpendicular to said contacts.
3. The stretchable electrical interconnect of claim 1 , wherein the ratio is at least 100:1.
4. The stretchable electrical interconnect of claim 1 , wherein said interconnect maintains electrical integrity when stretched.
5. The stretchable electrical interconnect of claim 4 , wherein said interconnect maintains electrical integrity when said displacement between said contacts is increased by 1000%.
6. The stretchable electrical interconnect of claim 4 , wherein said interconnect maintains electrical integrity when said displacement between said contacts is increased by 10000%.
7. The stretchable electrical interconnect of claim 4 , wherein said interconnect maintains electrical integrity when said displacement between said contacts is increased by 100000%.
8. The stretchable electrical interconnect of claim 1 , wherein the interconnection has a trace width ranging between 0.1-10 microns.
9. The stretchable electrical interconnect of claim 1 , further comprising locating the two electrical contacts on an elastomeric substrate.
10. The stretchable electrical interconnect of claim 9 , wherein the electrical contacts are bonded to the substrate and the interconnection is not bonded to the substrate.
11. The stretchable electrical interconnect of claim 9 , wherein the electrical contacts are semiconductor circuits.
12. The stretchable electrical interconnect of claim 9 , wherein the electrical contacts are metal contacts.
13. A stretchable electrical interconnect, comprising:
an electrical interconnect for connecting two electrical contacts, said electrical interconnect arranged boustrophedonicially to define rungs between said contacts, wherein said interconnect maintains electrical conductivity wherein said interconnect maintains electrical integrity when a displacement between said contacts is increased by 1000%, and wherein the electrical interconnect is made from a semiconductor material.
14. A method, comprising:
electrically interconnecting two electrical contacts with a stretchable interconnection that has the ability to twist between the two electrical contacts by up to approximately 180 degrees while maintaining electrical integrity of the stretchable interconnection, wherein the stretchable interconnection is made from a semiconductor material.
15. A device, comprising:
a body having a stretchable surface; and a stretchable electronic circuit comprising:
(i) a first discrete operative device;
(ii) a second discrete operative device;
(iii) a stretchable interconnect connecting said first discrete operative device to said second discrete operative device, said stretchable interconnect being made from a semiconductor material, and said stretchable interconnect having a substantially boustrophedonic pattern and able to maintain electrical conductivity when stretched up to 1000%, wherein said stretchable electronic circuit is affixed to the stretchable surface of said body.
16. The device of claim 15 , wherein the connecting is to a metal contact.
17. The device of claim 15 , wherein the connecting is to a semiconductor device.
18. The device of claim 15 , wherein the first discrete operative device, the second discrete operative device, and the stretchable interconnect are all made from the same material.
19. A method, comprising:
attaching at least two isolated electronic components to an elastomeric substrate;
arranging an electrical interconnection between said components in a boustrophedonic pattern, said electrical interconnection being made from a semiconductor material;
interconnecting the at least two isolated electronic components with said electrical interconnection; and
stretching the elastomeric substrate such that components separate relative to one another, wherein said electrical interconnection maintains substantially identical electrical performance characteristics that said electrical interconnection had in a pre-stretched form.
20. The method of claim 19 , wherein the stretching is a translational stretching.
21. The method of claim 20 , wherein the separation between the isolated electronic components increases by a percent as a result of the stretching.
22. The method of claim 21 , wherein the percent is 10%.
23. The method of claim 21 , wherein the percent is 100%.
24. The method of claim 21 , wherein the percent is 1,000%.
25. The method of claim 21 , wherein the percent is 10,000%.
26. The method of claim 21 , wherein the percent is 100,000%.
27. The method of claim 19 , wherein the stretching is a rotational stretching.
28. The method of claim 27 , wherein the rotation is greater than 180 degrees.
29. The method of claim 19 , wherein the stretching is in all three axes.
30. The method of claim 19 , wherein the electrical interconnection is made from the same semiconductor material as the isolated electronic components.
31. The method of claim 30 , wherein the electrical interconnection is fabricated at the same time as the isolated electronic components.
32. The method of claim 30 , wherein the semiconductor material is a single crystal semiconductor material.
33. The method of claim 19 , wherein the electrical interconnection is made of a different material than the isolated electronic components.
34. The method of claim 33 , wherein the different material is a metal.
35. The method of claim 33 , wherein the different material is loosely bound to the elastomeric substrate.
36. The method of claim 19 , wherein at least two isolated semiconductor circuits are fabricated on an upper surface of the elastomeric substrate separated by a lower surface of the elastomeric substrate, and wherein the electrical interconnection is fabricated at the level of the upper surface of the elastomeric substrate.
37. The method of claim 36 , wherein the lower surface of the elastomeric substrate includes a wavy form.