Nitride semiconductor light emitting device and method of manufacturing the same
View Patent ↗A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.
1. A nitride semiconductor light emitting device comprising:
a substrate;
a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof;
a silicon compound formed in a vertex region of each of the V-pits;
an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits; and
a second conductivity type nitride semiconductor layer disposed on the active layer.
2. The nitride semiconductor light emitting device of claim 1 , wherein the silicon compound fills part of the V-pit from the vertex region thereof.
3. The nitride semiconductor light emitting device of claim 1 , wherein the silicon compound includes pores therein.
4. The nitride semiconductor light emitting device of claim 1 , wherein the silicon compound is a silicon nitride or a silicon oxide.
5. The nitride semiconductor light emitting device of claim 1 , further comprising a first conductivity type nitride-based superlattice layer disposed between the first conductivity type nitride semiconductor layer and the active layer, and including depressions conforming to the shape of the plurality of V-pits.
6. The nitride semiconductor light emitting device of claim 1 , further comprising a second conductivity type nitride-based superlattice layer disposed between the active layer and the second conductivity type nitride semiconductor layer, and including depressions conforming to the shape of the plurality of V-pits.
7. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:
growing a first conductivity type nitride semiconductor layer on a substrate, the first conductivity type nitride semiconductor layer including a plurality of V-pits placed in a top surface thereof;
forming a silicon compound in a vertex region of each of the plurality of V-pits;
growing an active layer on the first conductivity type nitride semiconductor layer, the active layer including depressions conforming to the shape of the plurality of V-pits; and
growing a second conductivity type nitride semiconductor layer on the active layer.
8. The method of claim 7 , wherein the growing of the first conductivity type nitride semiconductor layer comprises forming the plurality of V-pits in the top surface of the first conductivity type nitride semiconductor layer by controlling a growth temperature.
9. The method of claim 8 , wherein the growth temperature ranges from 700° C. to 1000° C.
10. The method of claim 7 , wherein the growing of the first conductivity type nitride semiconductor layer comprises forming the plurality of V-pits in the top surface of the first conductivity type nitride semiconductor layer through chemical etching.
11. The method of claim 7 , wherein the forming of the silicon compound in the vertex region of each of the V-pits comprises forming the silicon compound in the vertex region of each of the V-pits by controlling a formation temperature of the silicon compound.
12. The method of claim 7 , wherein the forming of the silicon compound in the vertex region of each of the V-pits comprises forming a silicon compound entirely on the first conductivity type nitride semiconductor layer, and performing chemical etching to remove the formed silicon compound excluding the silicon compound placed in the vertex region of each of the V-pits.
13. The method of claim 7 , wherein in the growing of the active layer, a growth temperature is 900° C. or less.
14. The method of claim 7 , wherein in the growing of the second conductivity type nitride semiconductor layer, a growth temperature is 1000° C. or higher.
15. The method of claim 7 , further comprising forming a first conductivity type nitride-based superlattice layer, which includes depressions conforming to the shape of the plurality of V-pits formed in the top surface of the first conductivity type nitride semiconductor layer, on the first conductivity type nitride semiconductor layer after the growing of the first conductivity type nitride semiconductor layer.
16. The method of claim 7 , further comprising forming a second conductivity type nitride-based superlattice layer, which includes depressions conforming to the shape of the plurality of V-pits, on the active layer after the growing of the active layer.