Semiconductor device and method of manufacturing the same
A first and second gate electrodes are formed on a first and second active regions, respectively. The first and second gate electrodes have a first and second metal-containing conductive films, respectively. The first and second metal-containing conductive films are formed on the isolation region for segmenting the first and second active regions to be spaced apart from each other. A third metal-containing conductive film, which is a part of each of the first and second gate electrodes, is continuously formed from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film. The third metal-containing conductive film is in contact with the first and second metal-containing conductive films.
1. A semiconductor device comprising:
a first gate electrode formed on a first active region in a semiconductor substrate, and having a first metal-containing conductive film;
a second gate electrode formed on a second active region in the semiconductor substrate, and having a second metal-containing conductive film; and
an isolation region formed in the semiconductor substrate to segment the first active region and the second active region, wherein
a third metal-containing conductive film, which is a part of each of the first gate electrode and the second gate electrode, is continuously formed from a top of the first metal-containing conductive film through a portion above the isolation region to a top of the second metal-containing conductive film,
the third metal-containing conductive film is made of a silicide, and is formed by fully siliciding a silicon film in a thickness direction,
the third metal-containing conductive film has a thickness greater than those of the first metal-containing conductive film and the second metal-containing conductive film, and
the silicon film remains at an end of the first metal-containing conductive film between the first metal-containing conductive film and the third metal-containing conductive film.
2. The device of claim 1 , wherein
the first metal-containing conductive film and the second metal-containing conductive film are formed on the isolation region to be spaced apart from each other, and
the third metal-containing conductive film is in contact with the isolation region.
3. The device of claim 2 , wherein the third metal-containing conductive film is formed to fill space on the isolation region and between the first metal-containing conductive film and the second metal-containing conductive film.
4. The device of claim 1 , wherein
the first metal-containing conductive film and the second metal-containing conductive film are formed on the isolation region to be spaced apart from each other, and
the silicon film remains between the third metal-containing conductive film and the isolation region.
5. The device of claim 1 , wherein the silicide includes Ti, Ni, Co, or Pt.
6. The device of claim 1 , further comprising:
a first high dielectric gate insulating film formed between the first active region and the first gate electrode; and
a second high dielectric gate insulating film formed between the second active region and the second gate electrode.
7. The device of claim 6 , wherein the first high dielectric gate insulating film and the second high dielectric gate insulating film include HfSiO.
8. The device of claim 6 , wherein the insulating sidewall spacer extends continuously from on a side surface of the first metal-containing conductive film to on a side surface of the first high dielectric gate insulating film.
9. The device of claim 1 , wherein
the first gate electrode is a gate electrode of an N-type MIS transistor, and
the first metal-containing conductive film is made of a material having a work function of 4.55 eV or less.
10. The device of claim 1 , wherein the first metal-containing conductive film is made of a material including at least one of a Ta compound and a Hf compound.
11. The device of claim 1 , wherein
the second gate electrode is a gate electrode of a P-type MIS transistor, and
the second metal-containing conductive film is made of a material having a work function of 4.65 eV or more.
12. The device of claim 1 , wherein the second metal-containing conductive film is made of a material including at least one of a Ti compound and a Ru compound.
13. The device of claim 1 , wherein the second metal-containing conductive film has substantially a same thickness as the first metal-containing conductive film.
14. The device of claim 1 , wherein the third metal-containing conductive film has a thickness five times or more as great as those of the first metal-containing conductive film and the second metal-containing conductive film.
15. The device of claim 14 , wherein the silicide includes Pt.
16. The device of claim 14 , wherein the silicide includes Ni and Pt.
17. The device of claim 1 , wherein the silicide includes Pt.
18. The device of claim 1 , wherein the silicide includes Ni and Pt.
19. The device of claim 1 , wherein the third metal-containing conductive film is directly in contact with the first metal-containing conductive film and the second metal-containing conductive film.
20. The device of claim 1 , wherein the first metal-containing conductive film includes metal not existing in the second metal-containing conductive film.
21. The device of claim 1 , wherein
the first gate electrode does not include the second metal-containing conductive film, and
the second gate electrode does not include the first metal-containing conductive film.
22. The device of claim 1 , wherein neither the first metal-containing conductive film nor the second metal-containing conductive film is a silicide.
23. The device of claim 1 , wherein neither the first metal-containing conductive film nor the second metal-containing conductive film includes silicon.
24. The device of claim 1 , wherein the third metal-containing conductive film directly contacts the first metal-containing conductive film.
25. The device of claim 24 , wherein the third metal-containing conductive film is a single layer.