Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
1. A light emitting device, comprising:
a gallium oxide based substrate;
a gallium oxynitride based layer on the gallium oxide based substrate;
a first conductivity-type semiconductor layer on the gallium oxynitride based layer;
an active layer on the first conductivity-type semiconductor layer; and
a second conductivity-type semiconductor layer on the active layer.
2. The light emitting device according to claim 1 , further comprising:
a first electrode layer under the gallium oxide based substrate; and
a second electrode layer on the second conductivity-type semiconductor layer.
3. The light emitting device according to claim 1 , wherein the gallium oxynitride based layer comprises first conductivity-type impurities.
4. The light emitting device according to claim 1 , wherein the gallium oxide based substrate contains first conductivity-type impurities.
5. The light emitting device according to claim 1 , wherein the first conductivity-type semiconductor layer comprises a gallium nitride based layer containing n-type impurities, and the second conductivity-type semiconductor layer comprises a gallium nitride based layer containing p-type impurities.
6. The light emitting device according to claim 1 , wherein the active layer comprises a gallium nitride based layer or an indium-containing gallium nitride based layer.
7. The light emitting device according to claim 1 , wherein a surface of the gallium oxide based substrate is essentially free of scratches.
8. A method for manufacturing a light emitting device, the method comprising:
obtaining a gallium oxide based substrate;
forming a gallium oxynitride based layer on the gallium oxide based substrate;
forming a first conductivity-type semiconductor layer on the gallium oxynitride based layer;
forming an active layer on the first conductivity-type semiconductor layer; and
forming a second conductivity-type semiconductor layer on the active layer.
9. The method according to claim 8 , further comprising:
forming a first electrode layer under the gallium oxide based substrate; and
forming a second electrode layer on the second conductivity-type semiconductor layer.
10. The method according to claim 8 , wherein the obtaining of the gallium oxide based substrate comprises performing a thermal treatment on the gallium oxide based substrate in an oxygen atmosphere.
11. The method according to claim 8 , wherein the gallium oxide based substrate contains first conductivity-type impurities.
12. The method according to claim 8 , wherein the gallium oxynitride based layer contains first conductivity-type impurities.
13. The method according to claim 8 , wherein the first conductivity-type semiconductor layer comprises a gallium nitride based layer containing n-type impurities, and the second conductivity-type semiconductor layer comprises a gallium nitride based layer containing p-type impurities.
14. The method according to claim 8 , wherein the active layer comprises a gallium nitride based layer or an indium-containing gallium nitride based layer.