Thin-film transistor array panel and method of fabricating the same
View Patent ↗A thin-film transistor array panel and a manufacturing method thereof are provided for one or more embodiments. The thin-film transistor array panel may include: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a source electrode and a drain electrode formed on the gate insulating layer; and a flatness layer formed on the source electrode and the drain electrode, wherein the drain electrode has a higher height than the flatness layer.
1. A thin-film transistor array panel comprising:
a substrate;
a gate electrode formed on the substrate;
a gate insulating layer formed on the gate electrode;
a source electrode and a drain electrode formed on the gate electrode such that the lowest portions of the source electrode and the drain electrode cover the gate electrode;
an insulating layer formed on the source electrode; and
a contact hole formed through the insulating layer exposing a top surface of the drain electrode,
wherein the insulating layer is made of organic insulating material; and
wherein the top surface of the drain electrode has a higher height than a top surface of a portion of the insulating layer adjacent to the drain electrode at a bottom surface of the contact hole.
2. The thin-film transistor array panel of claim 1 , wherein the source electrode encloses the drain electrode.
3. The thin-film transistor array panel of claim 1 , wherein the source electrode partially encloses the drain electrode.
4. The thin-film transistor array panel of claim 1 , further comprising:
a pixel electrode contacting an upper surface of the drain electrode.
5. The thin-film transistor array panel of claim 1 , further comprising a passivation layer formed on the source electrode, wherein the insulating layer is formed on the passivation layer.
6. The thin-film transistor array panel of claim 1 , wherein at least one of a transverse length and a longitudinal length of the drain electrode is in a range of 2-16 μm.
7. The thin-film transistor array panel of claim 1 , wherein the source electrode and the drain electrode have a height of more than 1 μm.
8. The thin-film transistor array panel of claim 1 , wherein a height of the source electrode is less than the height of the drain electrode.
9. The thin-film transistor array panel of claim 1 , further comprising a color filter formed on the substrate.
10. The thin-film transistor array panel of claim 1 , wherein the thin-film transistor array panel forms part of a liquid crystal display device, the liquid crystal display device further comprising:
a second substrate;
a liquid crystal layer interposed between the substrate in the thin-film transistor array panel and the second substrate; and
wherein the second substrate includes an upper panel comprising:
a black matrix disposed on the second substrate;
an overcoat disposed on the black matrix; and
a common electrode disposed on the overcoat.
11. The thin-film transistor array panel of claim 1 , wherein the insulating layer is flat except for the portion adjacent to the drain electrode.