Semiconductor light emitting device and method of manufacturing the same

1. A method of manufacturing a semiconductor light emitting device, the method comprising:

stacking a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a substrate;

stacking a mask layer on a top surface of the second conductivity-type semiconductor layer, the mask layer being an oxide layer formed of SiO 2 ;

annealing the mask layer to be agglomerated and to form a plurality of mask patterns having the form of droplets; and

dry etching the second conductivity-type semiconductor layer on which the mask patterns are formed, to form light extraction patterns in a top portion of the second conductivity-type semiconductor layer, the light extraction patterns each having a columnar portion and a hemispherical top portion,

wherein the mask patterns are not removed after the step of dry etching the second conductivity-type semiconductor layer on which the mask patterns are formed.

2. The method of claim 1 , wherein the mask layer is deposited to a thickness of 1000 Å to 2000 Å.

3. The method of claim 1 , wherein the annealing is performed at a temperature ranging from 500° C. to 800° C.

4. The method of claim 1 , wherein the plurality of mask patterns in the form of droplets are spaced apart from each other at a distance ranging from about 0.05 μm to 0.15 μm.

5. The method of claim 1 , further comprising, after the forming of the light extraction patterns:

etching respective portions of the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer;

forming a first electrode on the exposed portion of the first conductivity-type semiconductor layer; and

forming a second electrode on the top of the second conductivity-type semiconductor layer.

6. The method of claim 1 , wherein the stacking of the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer comprises:

sequentially growing the second conductivity-type semiconductor layer, the active layer, and the first conductivity-type semiconductor layer on an insulating substrate;

stacking a conductive substrate on the first conductivity-type semiconductor layer; and

removing the insulating substrate.

7. The method of claim 6 , further comprising forming a second conductivity-type electrode on the top of the second conductivity-type semiconductor layer after the forming of the light extraction patterns.

8. The method of claim 1 , wherein

the columnar portion of each of the light extraction patterns has a predetermined depth, and

a respective top portion of the columnar portion of each light extraction pattern has a hemispherical shape.