Organic electronic device with low-reflectance electrode

1. An organic electronic device comprising:

an anode;

a hole injection layer

a hole transport layer;

a photoactive layer comprising a plurality of first subpixels, a plurality of second subpixels and a plurality of third subpixels;

an electron transport layer comprising an electron transport material and an n-dopant, the layer having a thickness greater than 50 nm; and

a cathode,

wherein one of the anode and cathode is light-transmitting and the other has low-reflectance.

2. The device of claim 1 , wherein the anode is light-transmitting and the cathode has low-reflectance.

3. The device of claim 2 , wherein the cathode comprises a material selected from the group consisting of Sm, Sm/Ag alloys, metal/organic mixtures, metal/inorganic mixtures, and oxygen deficient ZnO.

4. The device of claim 1 , wherein the electron transport material is selected from the group consisting of metal quinolates and phenanthroline derivatives.

5. The device of claim 1 , wherein the electron transport layer has a thickness in the range of 75-400 nm.

6. The device of claim 1 , wherein the electron transport layer has a thickness in the range of 100-300 nm.

7. The device of claim 1 , wherein the n-dopant is selected from the group consisting of Group 1 and 2 metals; Group 1 and 2 metal salts; Group 1 and 2 metal organic compounds; leuco dyes; metal complexes; tetrathianaphthacene; bis(ethylenedithio)tetrathiafulvalene; heterocyclic radicals or diradicals; and the dimers, oligomers, polymers, dispiro compounds and polycycles of heterocyclic radical or diradicals.

8. The device of claim 7 , wherein the metal complex is selected from the group consisting of W 2 (hpp) 4 and cobaltocene, where hpp=1,3,4,6,7,8-hexahydro-2H-pyrimido-[1,2-a]-pyrimidine.

9. The device of claim 1 , wherein the electron transport layer has a thickness of 300 to 500 nm.