Glass for covering optical element, glass-covered light-emitting element and glass-covered light-emitting device
View Patent ↗A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element. The glass-covered light-emitting element includes a semiconductor light-emitting element having a principal surface, and a P 2 O 5 —ZnO—SnO type glass covering the principal surface of the semiconductor light-emitting element, and the glass consists essentially of, as represented by mol % based on the following oxides, from 20 to 45% of P 2 O 5 , from 20 to 50% of ZnO and from 20 to 40% of SnO, and the glass has a glass transition point of at least 290° C. and at most 450° C., and a thermal expansion coefficient of at most 105×10 −7 /° C.
1. A glass for covering an optical element, consisting essentially of as represented by mol % based on the following oxides:
from 27 to 35% of P 2 O 5 ,
from 25 to 45% of ZnO,
from 25 to 40% of SnO, and
from 0.1 to 10% of at least one member selected from the group consisting of B 2 O 3 and CaO,
wherein the difference between the peak temperature of crystallization and the glass transition temperature of the glass is at least 150° C.
2. The glass for covering an optical element according to claim 1 , wherein the percentage of Sn 2+ based on the total amount of Sn atoms is at least 90%.
3. The glass for covering an optical element, according to claim 1 , which contains, as represented by mol % based on the following oxides:
from 0 to 3% of Al 2 O 3 ,
from 0 to 3% of In 2 O 3 , and
from 0 to 3% of La 2 O 3 ,
wherein the content of at least one member selected from the group consisting of Al 2 O 3 , In 2 O 3 and La 2 O 3 is from 0.1 to 7%.
4. The glass for covering an optical element according to claim 1 , which has an expansion coefficient of from 70×10 −7 to 100×10 −7 /° C.
5. The glass for covering an optical element according to claim 1 , which has a glass transition temperature of at most 400° C.
6. The glass for covering an optical element according to claim 1 , wherein the difference between the peak temperature of crystallization and the glass transition temperature of the glass is at least 180° C.
7. A glass-covered light-emitting element, comprising a semiconductor light-emitting element having a principal surface, and the glass of claim 1 covering the principal surface of the semiconductor light-emitting element.
8. The glass-covered light-emitting element according to claim 7 , wherein the glass has a glass transition point of at most 450° C.
9. The glass-covered light-emitting element according to claim 8 , wherein the glass consists essentially of, as represented by mol % based on the following oxides:
from 20 to 45% of P 2 O 5 ,
from 20 to 50% of ZnO, and
from 20 to 40% of SnO,
and the glass has a glass transition point of at least 290° C. and a thermal expansion coefficient of at most 105×10 −7 /° C.
10. The glass-covered light-emitting element according to claim 9 , wherein the content of SnO is from 20 to 35%.
11. The glass-covered light-emitting element according to claim 7 , wherein the weight reduction of the glass in its water-resistance test is at most 50%.
12. A glass-covered light-emitting device comprising:
a substrate having a principal surface;
a semiconductor light-emitting element having a principal surface and a rear surface and provided on the principal surface of the substrate so that the rear surface of the semiconductor light-emitting element faces the principal surface of the substrate; and
the glass of claim 1 covering the principal surface of the semiconductor light-emitting element.
13. A glass-covered light-emitting element comprising:
a semiconductor light-emitting element having a principal surface; and
a glass covering the principal surface of the semiconductor light-emitting element and consisting essentially of, as represented by mol % based on the following oxides: from 27 to 35% of P 2 O 5 , from 25 to 45% of ZnO, from 25 to 40% of SnO, and from 0.1 to 10% of at least one member selected from the group consisting of B 2 O 3 and CaO, wherein the difference between the peak temperature of crystallization and the glass transition temperature of the glass is at least 150° C.
14. A glass-covered light-emitting device comprising:
a substrate having a principal surface;
a semiconductor light-emitting element having a principal surface and a rear surface and provided on the principal surface of the substrate so that the rear surface of the semiconductor light-emitting element faces the principal surface of the substrate; and
a glass covering the principal surface of the semiconductor light-emitting element and consisting essentially of, as represented by mol % based on the following oxides: from 27 to 35% of P 2 O 5 , from 25 to 45% of ZnO, from 25 to 40% of SnO, and from 0.1 to 10% of at least one member selected from the group consisting of B 2 O 3 and CaO, wherein the difference between the peak temperature of crystallization and the glass transition temperature of the glass is at least 150° C.