Semiconductor device and method for manufacturing the same
A semiconductor device includes a first MISFET and a second MISFET, wherein the first MISFET includes a semiconductor substrate 100 , a first gate insulating film 101 a and a first gate electrode 102 a formed on the first region of the semiconductor substrate, and first side walls ( 103 a, 120 a ) formed on the side surface of the first gate electrode 102 a , and the second MISFET includes a second gate insulating film 101 b and a second gate electrode 102 b formed on the second region of the semiconductor substrate 100 , and second side walls ( 103 b, 120 b ) formed on the side surface of the second gate electrode 102 b . The width of the first side wall is smaller than the width of the second side wall, and the second side wall includes the second spacer 103 b containing a higher concentration of hydrogen than the first spacer 103 a.
1. A semiconductor device comprising:
a semiconductor substrate in which a first region and a second region are formed;
a first MISFET including a first gate insulating film formed on the first region of the semiconductor substrate, a first gate electrode formed on the first gate insulating film, and a first side wall made of an insulator formed on a side surface of the first gate electrode; and
a second MISFET including a second gate insulating film formed on the second region of the semiconductor substrate, a second gate electrode formed on the second gate insulating film, and a second side wall made of an insulator formed on a side surface of the second gate electrode, wherein
a bottom width of the first side wall is smaller than a bottom width of the second side wall,
the first side wall includes a first spacer containing hydrogen,
the second side wall includes a second spacer containing a higher concentration of hydrogen than the first spacer,
the first side wall includes a first inner side wall having a rectangular shape formed on a side surface of the first gate electrode, and a first outer side wall formed on a side surface of the first inner side wall,
the second side wall includes a second inner side wall having a rectangular shape formed on a side surface of the second gate electrode, and a second outer side wall formed on a side surface of the second inner side wall,
the first inner side wall is the first spacer,
the second inner side wall is the second spacer, and
a bottom width of the first outer side wall is substantially the same as a bottom width of the second outer side wall.
2. The semiconductor device of claim 1 , wherein a bottom width of the first spacer is smaller than a bottom width of the second spacer.
3. The semiconductor device of claim 1 , wherein the first spacer and the second spacer are both made of a silicon nitride.
4. The semiconductor device of claim 1 , wherein a film density of the first spacer is greater than a film density of the second spacer.
5. The semiconductor device of claim 1 , wherein
the first MISFET further includes a first impurity diffusion layer of a first conductivity type formed in regions of the first region of the semiconductor substrate that are located on opposite sides of the first gate electrode and under the first spacer, and a first high-concentration impurity diffusion layer containing a higher concentration of a first-conductivity-type impurity than the first impurity diffusion layer and formed in regions of the first region of the semiconductor substrate that are located beside the first side wall, and
the second MISFET further includes a second impurity diffusion layer of a second conductivity type formed in regions of the second region of the semiconductor substrate that are located on opposite sides of the second gate electrode and under the second spacer, and a second high-concentration impurity diffusion layer containing a higher concentration of a second-conductivity-type impurity than the second impurity diffusion layer and formed in regions of the second region of the semiconductor substrate that are located beside the second side wall.
6. The semiconductor device of claim 5 , wherein
the first impurity diffusion layer and the first high-concentration impurity diffusion layer contain arsenic, and
the second impurity diffusion layer and the second high-concentration impurity diffusion layer contain boron.
7. The semiconductor device of claim 1 , wherein
the first MISFET is of an n-channel type, and
the second MISFET is of a p-channel type.
8. The semiconductor device of claim 1 , wherein
the first and second gate electrodes are formed continuously in a gate width direction, and
the first side wall and the second side wall are formed continuously in the gate width direction.
9. The semiconductor device of claim 8 , wherein
the first region and the second region are apart from each other in a gate width direction, and
a transition between the bottom width of the first spacer to the bottom width of the second spacer is located within a region between the first and second regions.
10. The semiconductor device of claim 1 , wherein
the first and the second gate electrodes are formed continuously in a gate width direction, and
the first inner side wall and the second inner side wall are formed continuously in a gate width direction.
11. The semiconductor device of claim 10 , wherein
the first region and the second region are apart from each other in a gate width direction, and
a transition between the bottom width of the first inner side wall to the bottom width of the second inner side wall is located within a region between the first and second regions.
12. The semiconductor device of claim 1 , wherein an etching rate of the first spacer is substantially the same as an etching rate of the second spacer.