III-V light emitting device with thin n-type region
View Patent ↗A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.
1. A device comprising:
a semiconductor structure comprising a III-V light emitting layer disposed between an n-type region and a p-type region;
a transparent, conductive non-III-nitride material in direct contact with the n-type region; and
a reflective p-contact in direct contact with the p-type region on a surface of the semiconductor structure opposite the transparent, conductive non-III-nitride material;
wherein a total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is no more than 0.8 micron.
2. The device of claim 1 wherein the transparent, conductive non-III-nitride material is an oxide.
3. The device of claim 1 where a total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is InGaN.
4. The device of claim 1 wherein an in-plane lattice constant of the semiconductor material between the light emitting layer and the transparent-conductive non-III-nitride material is greater than 3.186 Å.
5. The device of claim 1 wherein a majority of light extracted from the semiconductor structure is extracted through the transparent, conductive non-III-nitride material.
6. The device of claim 5 wherein at least one opening which exposes a surface of the transparent, conductive non-III-nitride material is formed in the semiconductor structure, the device further comprising a metal n-contact disposed in the opening on the transparent, conductive non-III-nitride material.
7. The device of claim 1 further comprising an optical element bonded to the transparent, conductive non-III-nitride material.
8. The device of claim 1 further comprising a luminescent ceramic bonded to the transparent, conductive non-III-nitride material.
9. The device of claim 1 further comprising trenches formed in the semiconductor material aligned with trenches formed in the transparent, conductive non-III-nitride material.
10. The device of claim 1 wherein the light emitting layer is a III-nitride material.
11. The device of claim 1 wherein the n-type region has a sheet resistance greater than 90 Ω/square and a combination of the n-type region and the transparent, conductive non-III-nitride material has a sheet resistance less than 70 Ω/square.
12. The device of claim 1 wherein the n-type region has a sheet resistance greater than 80 Ω/square and a combination of the n-type region and the transparent, conductive non-III-nitride material has a sheet resistance less than 60 Ω/square.
13. The device of claim 1 wherein the total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is no more than 0.5 micron.