Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles

1. A method of forming a multi-doped junction, comprising:

(A) providing a first substrate and a second substrate;

(B) depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink comprising a first set of nanoparticles and a first set of solvents, the first set of nanoparticles comprising a first concentration of a first dopant;

(C) depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink comprising a second set of nanoparticles and a second set of solvents, the second set of nanoparticles comprising a second concentration of a second dopant;

(D) placing the first substrate and the second substrate in a back to back configuration;

(E) heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period;

(F) exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient comprising POCl 3 , a carrier N 2 gas, a main N 2 gas, and a reactive O 2 gas for a second time period; and

(G) heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.

2. The method of forming a multi-doped junction according to claim 1 , wherein the first temperature is between about 900° C. and about 1050° C. and the first time period is between about 1 minute to about 60 minutes; wherein a ratio of the carrier N 2 gas to the reactive O 2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C., and the second time period is about 5 minutes to about 35 minutes and wherein the third temperature is between about 800° C. and about 1100° C.

3. The method of forming a multi-doped junction according to claim 1 , wherein when the first or second dopant is boron, the first concentration is between about 5 at % and about 15 at %, and when the first or second dopant is phosphorous, the first concentration is between about 1.4 at % and about 5.6 at %.

4. The method of forming a multi-doped junction according to claim 1 , further including the step of

heating the first substrate and the second substrate in a first baking ambient to a fourth temperature of between about 200° C. and about 800° C. and for a fourth time period of between about 3 minutes and about 20 minutes, wherein the first baking ambient is one of an inert ambient and an oxidizing ambient,

after said depositing the first ink on the first surface or after said depositing the second ink on the second surface.

5. The method of forming a multi-doped junction according to claim 1 , further including the step of cleaning the first substrate and the second substrate in a wet chemical bath prior to said placing the first substrate and the second substrate in a the back to back configuration.

6. The method of forming a multi-doped junction according to claim 1 , wherein the first temperature is between about 975° C. and about 1025° C., and the first time period is between about 1 minute and about 40 minutes, the second temperature is between about 725° C. and about 825° C., and the second time period is between about 10 minutes and about 35 minutes and the third temperature is between about 850° C. and about 1050° C.

7. The method of forming a multi-doped junction according to claim 1 , wherein the third time period is between about 15 minutes and about 30 minutes.

8. The method of forming a multi-doped junction according to claim 1 , wherein the first drive-in ambient is one of an inert ambient and an oxidizing ambient, and the second drive-in ambient is one of the inert ambient and the oxidizing ambient.

9. The method of forming a multi-doped junction according to claim 1 , wherein a) the first ink is doped with boron and the second ink is intrinsic or b) the second ink is doped with boron and the first ink is intrinsic.

10. A method of forming a set of counter-doped regions, comprising:

(A) providing a first substrate and a second substrate;

(B) depositing a first ink and a second ink on a first surface of the first substrate and a second surface of the second substrate, the first ink comprising a set of boron-doped nanoparticles and a first set of solvents, the second ink comprising a set of phosphorous-doped nanoparticles and a second set of solvents;

(C) placing the first substrate and the second substrate inside a diffusion tube wherein the first surface is facing the second surface;

(D) heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period;

(E) exposing the first substrate and the second substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl 3 , a carrier N 2 gas, a main N 2 gas, and a reactive O 2 gas-at a second and for a second time period; and

(F) heating the first substrate and the second substrate in a second drive-in ambient to a third temperature and for a third time period.

11. The method of forming a set of counter-doped regions according to claim 10 , wherein the set of boron-doped nanoparticles comprise between about 5 at % and about 15 at % of boron, and the set of phosphorous-doped nanoparticles comprise between about 1.4 at % and about 5.6 at % of phosphorous.

12. The method of forming a set of counter-doped regions according to claim 10 , wherein the first temperature is between about 900° C. and about 1050° C., and the first time period is between about 1 minute to about 60 minutes, wherein a ratio of the carrier N 2 gas to the reactive O 2 gas is between about 1:1 and about 1.5:1, the second temperature is between about 700° C. and about 1000° C., and the second time period is between about 5 minutes to about 35 minutes and wherein the third temperature is between about 800° C. and about 1100° C.

13. The method of forming a set of counter-doped regions according to claim 10 , further including the step of

heating the first substrate and the second substrate in a first baking ambient to a fourth temperature of between about 200° C. and about 800° C. and for a fourth time period of between about 3 minutes and about 20 minutes, wherein the first baking ambient is one of an inert ambient and an oxidizing ambient,

after depositing the first ink and the second ink on the first surface of the first substrate and the second surface of the second substrate or between depositing the first ink and depositing the second ink.

14. The method of forming a set of counter-doped regions according to claim 10 , further including the step of cleaning the first substrate and the second substrate in a wet chemical bath prior to placing the substrate in the diffusion tube.

15. The method of forming a set of counter-doped regions according to claim 10 , wherein the first temperature is between about 975° C. and about 1025° C., and the first time period is between about 1 minute and about 40 minutes, the second temperature is between about 725° C. and about 825° C., and the second time period is between about 10 minutes and about 35 minutes and wherein the third temperature is between about 850° C. and about 1050° C.

16. The method of forming a set of counter-doped regions according to claim 10 , wherein the third time period is between about 15 minutes and about 30 minutes.

17. The method of forming a set of counter-doped regions according to claim 10 , wherein at least one of the first drive-in ambient and the second dime drive in ambient is one of an inert ambient and an oxidizing ambient.

18. The method of forming a set of counter-doped regions according to claim 10 , wherein the first ink includes a boron dopant and the second ink includes a phosphorous dopant.