Light emitting device
A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer.
1. A light emitting device, comprising:
a substrate;
a first conductive semiconductor layer on the substrate;
an active layer on the first conductive semiconductor layer;
a second conductive semiconductor layer on the active layer; a resin layer under the substrate; and a reflective layer under the resin layer and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer,
wherein the second conductive semiconductor layer comprises a light extraction pattern having a plurality of grooves and projections on the upper surface of the second conductive semiconductor layer and configured to extract the light emitted by the active layer from the second conductive semiconductor layer, and
wherein the projections of the light extraction pattern face away from the second conductive semiconductor layer.
2. The light emitting device according to claim 1 , further comprising an un-doped GaN based-layer between the substrate and the first conductive semiconductor layer.
3. The light emitting device according to claim 1 , wherein the substrate comprises a light scattering pattern having a projection or groove shape on an upper surface of the substrate and configured to scatter the light emitted by the active layer.
4. The light emitting device according to claim 1 , wherein the light reflection pattern includes a plurality of projections or grooves on the upper surface of the reflective layer.
5. The light emitting device according to claim 1 , wherein the substrate is a growth substrate on which the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are grown.
6. The light emitting device according to claim 1 , wherein the substrate comprises at least one of sapphire (Al2O3), Si, SiC, GaAs, ZnO and MgO.
7. The light emitting device according to claim 1 , wherein the reflective layer comprises at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au) and silver (Ag).
8. A light emitting device, comprising:
a substrate;
a first conductive semiconductor layer on the substrate;
an active layer on the first conductive semiconductor layer;
a second conductive semiconductor layer on the active layer;
a resin layer under the substrate; and
a reflective layer under the resin layer and configured to reflect light emitted by the active layer in directions away from the reflective layer,
wherein at least one of an upper surface of the reflective layer and lower surface of the resin layer includes a light reflection pattern configured to reflect the light emitted by the active layer in directions away from the reflective layer.
9. The light emitting device according to claim 8 , further comprising an un-doped GaN based-layer between the substrate and the first conductive semiconductor layer.
10. The light emitting device according to claim 8 , wherein the light reflection pattern includes a plurality of projections or grooves on the upper surface of the reflective layer.
11. The light emitting device according to claim 8 , wherein the light reflection pattern includes a plurality of projections or grooves on a lower surface of the resin layer.
12. The light emitting device according to claim 8 , wherein the light reflection pattern is disposed parallel with the substrate.
13. The light emitting device according to claim 8 , wherein the substrate is a growth substrate on which the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are grown.
14. The light emitting device according to claim 8 , wherein the substrate comprises at least one of sapphire (Al2O3), Si, SiC, GaAs, ZnO and MgO, and
wherein the reflective layer comprises at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au) and silver (Ag).
15. The light emitting device according to claim 8 , wherein an upper surface of the resin layer is disposed parallel with a lower surface of the substrate, and
wherein the light reflection pattern is formed from the reflective layer.
16. A light emitting device, comprising:
a substrate;
a first conductive semiconductor layer on the substrate;
an active layer on the first conductive semiconductor layer;
a second conductive semiconductor layer on the active layer;
a resin layer under the substrate; and
a reflective layer under the resin layer and configured to reflect light emitted by the active layer in directions away from the reflective layer,
wherein the second conductive semiconductor layer comprises a light extraction pattern having a projection or groove shape on the upper surface of the second conductive semiconductor layer and configured to extract the light emitted by the active layer from the second conductive semiconductor layer.
17. The light emitting device according to claim 16 , wherein the substrate comprises a light scattering pattern having a projection or groove shape on an upper surface of the substrate and configured to scatter the light emitted by the active layer.