IP Library Granted Patent US 8,053,665
Granted Patent B2
US 8,053,665 · App. 12/626,778 · Granted Nov 8, 2011

Truncated pyramid structures for see-through solar cells

Assignee: Solexel, Inc.
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Quick Facts
Patent No.
US 8,053,665
App. No.
12/626,778
Granted
Nov 8, 2011
Kind
B2
Abstract

The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.

Claims (13)

1. A method for making a three-dimensional thin film solar cell, comprising:

patterning a reusable crystalline silicon template with a periodic array of hexagonal pyramidal cavities according to a wet chemical etching process, said reusable crystalline silicon template having dimensions of approximately 200×200 millimeters;

chemically cleaning said reusable crystalline silicon template;

forming a sacrificial porous silicon release layer comprising at least two different porosity values on a surface of said reusable crystalline silicon template, said porous silicon release layer comprising:

a top layer having a porosity in the range of 20% to 40%; and

a bottom layer having a porosity in the range of 40% to 80%;

depositing a doped crystalline silicon film onto said sacrificial porous silicon release layer, said doped silicon film being substantially conformal to said reusable crystalline silicon template and having a thickness in the range of 2 to 50 microns;

etching said sacrificial porous silicon release layer;

detaching and removing said doped silicon film from said reusable crystalline silicon template; and

removing a plurality of tips from said doped silicon film by:

depositing a hard masking thin layer having a thickness in the range of 0.05 to 0.5 microns on said doped silicon film;

patterning said hard masking thin layer according to a self-aligned selective chemical etching process, thereby creating exposed crystalline silicon regions not covered and protected by said hard masking layer; and

performing a selective silicon etching process to selectively etch away said regions not covered by said hard masking layer, thereby creating an array of see-through holes in said doped silicon film.

Assignments (6)
ASSIGNMENT OF LOAN DOCUMENTS Recorded Sep 29, 2017
From: OPUS BANK
To: OB REALTY, LLC
Reel/Frame 044062/0383 →
CHANGE OF NAME Recorded Jul 28, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043367/0649 →
RECORDATION OF FORECLOSURE OF PATENT PROPERTIES Recorded Jul 27, 2017
From: OB REALTY, LLC
To: OB REALTY, LLC
Reel/Frame 043350/0822 →
CHANGE OF NAME Recorded Jul 26, 2017
From: SOLEXEL, INC.
To: BEAMREACH SOLAR, INC.
Reel/Frame 043342/0439 →
SECURITY INTEREST Recorded Jan 7, 2015
From: SOLEXEL, INC.
To: OPUS BANK
Reel/Frame 034731/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2010
From: MOSLEHI, MEHRDAD M; WANG, DAVID XUAN-QI
To: SOLEXEL, INC.
Reel/Frame 023740/0540 →
Continuity (2)
Provisional Application 61118243 · Nov 26, 2008
Related Publication 20100116316A1 · May 13, 2010