Method of manufacturing thin film resonator
A method of producing a piezoelectric thin film resonator is provided. A sacrificial layer is formed on a part of the piezoelectric film. The sacrificial layer is patterned, and thereafter an upper electrode is formed on the piezoelectric layer. The method further includes removing the sacrificial layer formed on the piezoelectric layer; and patterning the piezoelectric film. In the step of removing the sacrificial layer, the sacrificial layer is removed such that at least a portion of the periphery of the upper electrode has a reversely tapered shape that reflects the tapered portion of the sacrificial layer, and in the step of patterning the piezoelectric film, the piezoelectric film is removed such that a lower end of the reversely tapered periphery of the upper electrode is placed so as to coincide with or to be in the vicinity of an end portion of the patterned piezoelectric film.
1. A method of producing a piezoelectric thin film resonator, comprising:
forming a lower electrode on a substrate by patterning;
forming a piezoelectric film on the substrate and the lower electrode;
forming a sacrificial layer on a part of the piezoelectric film;
patterning the sacrificial layer;
thereafter forming an upper electrode on the piezoelectric layer;
removing the sacrificial layer formed on the piezoelectric layer; and
patterning the piezoelectric film,
wherein when patterning the sacrificial layer, the patterning is carried out such that a portion of the sacrificial layer that comes into contact with a periphery of the upper electrode becomes tapered,
wherein in the step of removing the sacrificial layer, the sacrificial layer is removed such that at least a portion of the periphery of the upper electrode has a reversely tapered shape that reflects the tapered portion of the sacrificial layer, and
wherein in the step of patterning the piezoelectric film, the piezoelectric film is removed such that a lower end of the reversely tapered shape of the upper electrode is placed so as to coincide with, or to be in the vicinity of, an end portion of the patterned piezoelectric film.
2. The method according to claim 1 , wherein an area where the upper electrode and the lower electrode oppose each other has an elliptic shape.
3. The method according to claim 1 , wherein an area where the upper electrode and the lower electrode oppose each other has a polygonal shape that does not include two parallel sides.
4. The method according to claim 1 , wherein the sacrificial layer is made of SiO 2 or a photoresist.