IP Library Granted Patent US 8,294,362
Granted Patent B2
US 8,294,362 · App. 12/628,084 · Granted Oct 23, 2012

Image display device, image display system, and methods for fabricating the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,294,362
App. No.
12/628,084
Granted
Oct 23, 2012
Kind
B2
Abstract

A display device including a display panel is provided, including a substrate having a luminance region and a none-luminance region thereover. An interlayer dielectric layer is disposed over the substrate. A reflection layer is disposed over the interlayer dielectric layer in the luminance region. A planarization layer is disposed over the reflection layer, having a rugged top surface corresponding to the reflection layer. A first electrode is disposed over the planarization layer, having a rugged top surface corresponding to the reflection layer. A pixel defining layer is disposed over the planarization layer, exposing the rugged top surface of the first electrode and defining the luminance region. An electroluminescent layer and a second electrode are sequentially stacked over the first electrode.

Claims (45)

1. An image display device including a display panel, comprising:

a substrate having a luminance region and a none-luminance region thereover;

an interlayer dielectric layer disposed over the substrate;

a reflection layer disposed over the interlayer dielectric layer in the luminance region, wherein the reflection layer does not extend to electrically connect to any other structure;

a planarization layer disposed over the reflection layer, having a rugged top surface corresponding to the reflection layer, wherein the reflection layer is completely electrically insulated from other structure by the planarization layer and the interlayer dielectric layer;

a first electrode disposed over the planarization layer, having a rugged top surface corresponding to the reflection layer;

a pixel defining layer disposed over the planarization layer, exposing the rugged top surface of the first electrode and defining the luminance region; and

an electroluminescent layer and a second electrode sequentially stacked over the first electrode.

2. The image display device as claimed in claim 1 , further comprising:

a thin film transistor disposed under the interlayer dielectric layer and in the non-luminance region, having a source/drain region; and

a conductive layer disposed in the non-luminance region and over the interlayer dielectric layer, wherein a first opening is formed in the interlayer dielectric layer and the conductive layer is coupled to the source/drain region via the first opening.

3. The image display device as claimed in claim 2 , wherein the planarization layer is formed with a second opening, and the first electrode is coupled to the conductive layer via the second opening.

4. The image display device as claimed in claim 2 , wherein the conductive layer and the reflection layer comprise same material.

5. The image display device as claimed in claim 1 , wherein the electroluminescent layer and the second electrode respectively have a rugged top surface corresponding to the reflection layer.

6. The image display device as claimed in claim 1 , wherein the first electrode is an anode, the second electrode is a cathode, and the first, second electrodes and the electroluminescent layer form a light emitting element.

7. The image display device as claimed in claim 1 , wherein the reflection layer has a planar top surface.

8. A method for fabricating an image display device, comprising:

forming an interlayer dielectric layer over a substrate, wherein the substrate has a luminance region and a non-luminance region thereover;

forming a reflection layer over the interlayer dielectric layer in the luminance region;

forming a planarization layer over the reflection layer;

forming at the top of the planarization layer a rugged top surface corresponding to the reflection layer, comprising:

forming a resist layer with an opening therein over the planarization layer, wherein the opening substantially aligns to the reflection layer and exposes a portion of a top surface of the planarization layer;

treating the portion of the top surface of the planarization layer exposed by the opening, using the resist layer as a mask, thereby forming the rugged top surface on top of the substrate; and

removing the resist layer;

forming a first electrode over the planarization layer, having a rugged top surface corresponding to the reflection layer;

forming a pixel defining layer disposed over the planarization layer, exposing the rugged top surface of the first electrode and defining the luminance region; and

sequentially stacking an electroluminescent layer and a second electrode over the first electrode.

9. The method as claimed in claim 8 , further comprising:

providing a thin film transistor (TFT) in the non-luminance region, wherein the TFT is formed under the interlayer dielectric layer and has a source/drain region; and

forming a conductive layer in the non-luminance region and over the interlayer dielectric layer, wherein the interlayer dielectric is formed with a first opening and the conductive layer is coupled to the source/drain region via the first opening.

10. The method as claimed in claim 9 , wherein the planarization layer is formed with a second opening, and the first electrode is coupled to the conductive layer via the second opening.

11. The method as claimed in claim 9 , wherein the electroluminescent layer and the second electrode respectively have a rugged top surface corresponding to the reflection layer.

12. The method as claimed in claim 8 , wherein the conductive layer and the reflection layer comprise same material.

13. The method as claimed in claim 8 , wherein the first electrode is an anode, the second electrode is a cathode, and the first, second electrodes and the electroluminescent layer form a light emitting element.

14. The method as claimed in claim 8 , wherein the reflection layer has a planar top surface.

15. An image display system, comprising:

an image display device including a display panel, comprising:

a substrate having a luminance region and a none-luminance region thereover;

an interlayer dielectric layer disposed over the substrate;

a reflection layer disposed over the interlayer dielectric layer in the luminance region, wherein the reflection layer does not extend to electrically connect to any other structure;

a planarization layer disposed over the reflection layer, having a rugged top surface corresponding to the reflection layer, wherein the reflection layer is completely electrically insulated from other structure by the planarization layer and the interlayer dielectric layer;

a first electrode disposed over the planarization layer, having a rugged top surface corresponding to the reflection layer;

a pixel defining layer disposed over the planarization layer, exposing the rugged top surface of the first electrode and defining the luminance region; and

an electroluminescent layer and a second electrode sequentially stacked over the first electrode; and

an input unit coupled to the image display device to control the image display device for rendering an image.

Assignments (3)
CHANGE OF NAME Recorded Apr 7, 2014
From: CHIMEI INNOLUX CORPORATION
To: INNOLUX CORPORATION
Reel/Frame 032621/0718 →
MERGER Recorded Feb 3, 2011
From: TPO DISPLAYS CORP.
To: CHIMEI INNOLUX CORPORATION
Reel/Frame 025801/0635 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2010
From: NISHIKAWA, RYUJI; HSU, HSIANG-LUN
To: TPO DISPLAYS CORP.
Reel/Frame 023908/0352 →