Semiconductor light emitting device having surface plasmon layer
View Patent ↗Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
1. A semiconductor light emitting device, comprising:
an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween; and
a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, the surface plasmon layer including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers,
wherein the metallic particles are placed within a distance of 50 nm or less from the active layer.
2. The semiconductor light emitting device of claim 1 , wherein resonance is caused by surface plasmons of the metallic particles and light emitted from the active layer.
3. The semiconductor light emitting device of claim 1 , wherein the metallic particles are enclosed by the insulating material to be insulated from both the n-type semiconductor layer and the p-type semiconductor layer.
4. The semiconductor light emitting device of claim 1 , wherein the metallic particles are a plurality of nanoscale particles.
5. The semiconductor light emitting device of claim 1 , wherein the metallic particles have a shape of a thin film.
6. The semiconductor light emitting device of claim 1 , wherein the conductive via of the surface plasmon layer is filled with a semiconductor material.
7. The semiconductor light emitting device of claim 6 , wherein the semiconductor material is formed of the same material as that of the n-type semiconductor layer.
8. The semiconductor light emitting device of claim 1 , wherein the surface plasmon layer is provided in plurality, wherein the surface plasmon layers are disposed between the n-type semiconductor layer and the active layer and between the p-type semiconductor layer and the active layer, respectively.
9. The semiconductor light emitting device of claim 1 , wherein the metallic particles have a material selected from the group consisting of Ag, Al, Au, Pt and Cu.
10. The semiconductor light emitting device of claim 1 , wherein the surface plasmon layer has a thickness ranging from 0.1 nm to 500 nm.
11. The semiconductor light emitting device of claim 1 , wherein the insulating material is formed of silicon oxide or silicon nitride.