Light emitting device and method for manufacturing the same

1. A light emitting device comprising:

a first electrode;

a second electrode being light transmitting; and

a carrier sandwiched between the first electrode and the second electrode, and containing light emitters,

wherein the light emitters are fine particles containing GeO and GeO 2 , and

wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

2. A light emitting device comprising:

a first electrode;

a second electrode being light transmitting;

a carrier sandwiched between the first electrode and the second electrode, and containing light emitters;

wherein the light emitters are fine particles containing GeO and GeO 2 ,

wherein the first electrode has a pn junction formed with a p-type semiconductor and an n-type semiconductor on a surface being in contact with the carrier, and

the first electrode is constituted with a p-type semiconductor part and a n-type semiconductor part both having a pn-junction at least on a surface being in contact with the carrier,

a third electrode formed on the p-type semiconductor part and parts without the carrier thereon; and

a fourth electrode formed on the n-type semiconductor part and parts without the carrier thereon.

3. The device according to claim 2 , wherein the light emitters are fine particles of which maximum particle diameter is of 1 nm to 20 nm.

4. The device according to claim 2 , wherein the light emitters provide electroluminescence having a peak wavelength in the range of 350 to 500 nm when a voltage is applied to the carrier between the first electrode and the second electrode.

5. The device according to claim 2 , wherein the light emitters are fine particles containing GeO and GeO 2 , and the light emitters contain GeO having 10% or more in the case where the entire germanium oxide contained in the light emitters is determined to be 100%.

6. The device according to claim 2 , wherein the carrier is made of an insulator.

7. The device according to claim 2 , wherein the carrier is made of silicon oxide, silicon nitride, or silicon oxynitride.

8. The device according to claim 2 , wherein the second electrode has a transmittance of light with a wavelength of 300 nm or longer and 500 nm or shorter, and the transmittance being of 60% or higher and 99.99% or lower.

9. The device according to claim 2 , wherein the second electrode is made of a metal oxide thin film, a metal thin film, or a semiconductor thin film.

10. The device according to claim 2 , wherein the pn-junction formed with the p-type semiconductor part and the n-type semiconductor part is formed at constant intervals on the surface of the first electrode being in contact with the carrier.

11. The device according to claim 2 , wherein the pn-junction formed with the p-type semiconductor part and the n-type semiconductor part is evenly formed on the surface of the first electrode being in contact with the carrier.

12. The device according to claim 2 , wherein at least one of the p-type semiconductor part and the n-type semiconductor part has an impurity concentration of 5×10 18 /cm 3 or more.

13. The device according to claim 2 , wherein the p-type semiconductor part and the n-type semiconductor part are made of silicon as the principal constituent.

14. The device according to claim 2 , wherein the device emits light by applying a negative voltage to the third electrode, a positive voltage to the fourth electrode, and a positive or negative voltage to the second electrode.

15. The device according to claim 2 , wherein the device emits electroluminescence with a wavelength peak in a range of 340 to 440 nm by applying a negative voltage to the third electrode, a positive voltage to the fourth electrode, and a positive or negative voltage to the second electrode.