Semiconductor device manufacturing method and semiconductor device
View Patent ↗In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.
1. A method for manufacturing a semiconductor device including a ferroelectric capacitor, the method comprising:
forming a first metal film electrically connected to a transistor;
forming an amorphous or microcrystalline metal oxide film over the first metal film;
reducing the metal oxide film to a second metal film and forming a ferroelectric film over the second metal film; and
forming a conductive film over the ferroelectric film.
2. The method according to claim 1 , wherein in forming the metal oxide film, thickness of the metal oxide film is set so that the metal oxide film is reduced completely to the second metal film at the time of forming the ferroelectric film.
3. The method according to claim 1 , wherein in forming the metal oxide film, the metal oxide film is made amorphous or microcrystalline by controlling temperature at which the metal oxide film is formed.
4. The method according to claim 1 , wherein in forming the metal oxide film, the metal oxide film is formed in an atmosphere of mixed gas which contains oxygen gas, and oxidation degree of the metal oxide film reduced is controlled by controlling ratio of the oxygen gas contained in the mixed gas.
5. The method according to claim 4 , wherein the ratio of the oxygen gas is changed according to a rate at which the metal oxide film is formed.
6. The method according to claim 1 , wherein in forming the ferroelectric film:
the ferroelectric film is formed by a MOCVD method;
after the metal oxide film is formed, material gas for the ferroelectric film is introduced; and
the metal oxide film is reduced to the second metal film with a component contained in the material gas, and the ferroelectric film is formed over the second metal film with the material gas.
7. The method according to claim 6 , wherein before introducing the material gas:
a temperature raising process for raising temperature to a temperature value at which the ferroelectric film is formed is performed; and
the metal oxide film is crystallized in the temperature raising process.
8. The method according to claim 1 , further comprising performing heat treatment in an atmosphere of an inert gas after the formation of the first metal film and before the formation of the metal oxide film.
9. The method according to claim 1 , further comprising performing heat treatment in an atmosphere of mixed gas which contains oxygen gas after the formation of the ferroelectric film.
10. The method according to claim 1 , wherein the metal oxide film is a noble metal oxide film.
11. The method according to claim 3 , wherein the temperature at which the metal oxide film is formed is 10° C. to 100° C.
12. The method according to claim 11 , wherein the temperature at which the metal oxide film is formed is about 60° C.
13. A semiconductor device including a ferroelectric capacitor, the device comprising:
a first metal film electrically connected to a transistor;
a second metal film which is formed over the first metal film and in which a diameter of crystal grains is smaller than a diameter of crystal grains in the first metal film;
a ferroelectric film formed over the second metal film; and
a conductive film formed over the ferroelectric film.
14. The semiconductor device according to claim 13 , wherein the second metal film is thinner than the first metal film.
15. The semiconductor device according to claim 13 , wherein the second metal film is 10 nanometers to 40 nanometers in thickness.
16. The semiconductor device according to claim 15 , wherein the diameter of the crystal grains in the second metal film is smaller than or equal to 20 nanometers.
17. The semiconductor device according to claim 13 , wherein the second metal film is a noble metal film.
18. The semiconductor device according to claim 13 , wherein the first metal film and the second metal film are made of a same element.
19. The semiconductor device according to claim 13 , wherein the first metal film and the second metal film contain iridium.
20. A method for manufacturing a semiconductor device including a ferroelectric capacitor, the method comprising:
forming a lower electrode;
forming a ferroelectric film formed over the lower electrode; and
forming an upper electrode over the ferroelectric film,
wherein:
forming the lower electrode including:
forming a first metal film; and
forming a metal oxide film over the first metal film at a temperature of 10° C. to 100° C., and
forming the ferroelectric film including reducing the metal oxide film to a second metal film and forming the ferroelectric film over the second metal film.