Magnetic thin film and method of manufacturing the same, and various application devices using the same
View Patent ↗The present invention relates to a magnetic thin film containing a L1 1 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L1 1 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.
1. A magnetic thin film containing a L1 1 type Co—Pt—C ordered alloy in which atoms are orderly arranged.
2. A magnetic thin film according to claim 1 , wherein the magnetic thin film contains C of 50 vol % or less.
3. A magnetic thin film according to claim 1 , wherein at least one of metallic elements other than Co and Pt is contained in the Co—Pt—C alloy.
4. A magnetic thin film according to claim 1 , wherein the magnetic thin film is formed of a granular structure having non-magnetic grain boundaries.
5. A magnetic thin film according to claim 1 , wherein an easy axis of magnetization is oriented perpendicular to a film plane.
6. A method of manufacturing the magnetic thin film on the substrate according to claim 1 ,
wherein the substrate is set to a temperature of 150 to 500° C., and the magnetic thin film is formed by a highly vacuumed magnetron sputter method in which a vacuum degree prior to film forming is equal to or less than 1×10 −4 Pa.
7. A method of manufacturing the magnetic thin film according to claim 6 , wherein the substrate is set to a temperature of 270 to 400° C.
8. A method of manufacturing the magnetic thin film according to claim 6 , wherein the vacuum degree is equal to or less than 7×10 −7 Pa.
9. A perpendicular magnetic recording medium provided with the magnetic thin film according to claim 1 .
10. A tunnel magnetic resistive element provided with the magnetic thin film according to claim 1 .
11. A magnetic resistive random access memory provided with the magnetic thin film according to claim 1 .
12. A micro electromechanical system device provided with the magnetic thin film according to claim 1 .