Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
View Patent ↗An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
1. A method comprising defining a local catalyst spot on a back side of a substrate having a front side and the back side, growing a nanowire from the local catalyst spot, and forming a nanostructured waveguide, wherein the back-side of the substrate is exposed to an incoming source of radiation.
2. The method of claim 1 , wherein the substrate comprises a Si substrate and the nanowire is disposed on or within the Si substrate.
3. The method of claim 1 , wherein the defining the local catalyst spot is performed by using a lithography method.
4. The method of claim 3 , wherein the lithography method comprises an electron beam lithography.
5. The method of claim 1 , wherein the growing the nanowire from the local catalyst spot comprises selecting growth parameters for a catalytic wire growth.
6. The method of claim 1 , further comprising growing different concentric layers around the nanowire.
7. The method of claim 6 , wherein the different concentric layers comprise cladding layers.
8. The method of claim 1 , further comprising forming contacts on the nanowire.
9. The method of claim 8 , wherein the contacts are connected to the substrate.
10. The method of claim 1 , further comprising placing an optical coupler on top of the nanostructured waveguide to increase radiation coupling to the nanostructured waveguide, optionally wherein the optical coupler is electrically conductive.
11. The method of claim 1 , wherein the nanowire is configured to convert energy of the electromagnetic radiation transmitted through the nanowire and to generate electron hole-pairs (excitons).
12. A method comprising defining a local catalyst spot on a back side of a substrate having a front side and the back side, growing a nanowire from the local catalyst spot, and forming a nanostructured waveguide, and forming an image sensing circuit on the front side, wherein the back-side of the substrate is configured to be exposed to an incoming source of radiation.