Nanowire photo-detector grown on a back-side illuminated image sensor

1. A device comprising a substrate having a front side, a back-side exposed to incoming radiation, a waveguide comprising a nanowire disposed on or within the substrate, and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths of the incoming radiation up to a selective wavelength and an active element to detect the wavelengths of the incoming radiation up to the selective wavelength transmitted through the nanowire; wherein the device further comprises a cladding; wherein the cladding is configured to be a channel to transmit the wavelengths of the electromagnetic radiation beam that do not transmit through the nanowire; and wherein the cladding comprises more than one layers, wherein the more than one layers have indices of refraction consecutively smaller than an index of refraction the nanowire.

2. The device of claim 1 , wherein the nanowire is disposed within a cavity in the substrate, the front side is not exposed to the incoming radiation, and the image sensing circuit is on or within a layer on the front-side of the substrate.

3. The device of claim 1 , wherein the device does not include a color filter nor infra-red filter.

4. The device of claim 1 , wherein the nanowire comprises a semiconductor.

5. The device of claim 1 , further comprising a lens structure or an optical coupler over the nanowire, wherein the lens structure or the optical coupler is operably coupled to the nanowire.

6. The device of claim 1 , further comprising an anti-reflective layer disposed on the substrate.

7. The device of claim 1 , wherein the active element is configured to be a photodiode, a charge storage capacitor, or combinations thereof.

8. The device of claim 1 , wherein the device is an image sensor.

9. The device of claim 1 , wherein the selective wavelength is a function of the diameter of the nanowire.

10. The device of claim 1 , further comprising a vertical photogate.

11. The device of claim 1 , wherein the nanowire is configured to convert energy of the electromagnetic radiation transmitted through the nanowire and to generate electron hole-pairs (excitons).

12. The device of claim 11 , wherein the nanowire comprises a pn or pin junction that is configured to detect the excitons generated in the nanowire.

13. The device of claim 11 , further comprising an insulator layer around the nanowire and a metal layer around the insulator layer to form a capacitor that is configured to collect the excitons generated in the nanowire and store charge in the capacitor.

14. The device of claim 13 , further comprising metal contacts that connect to the metal layer and nanowire to control and detect the charge stored in the capacitor.

15. The device of claim 1 , further comprising a cladding, wherein the cladding comprises a passive waveguide.

16. The device of claim 1 , further comprising a peripheral photosensitive element, wherein the peripheral photosensitive element is operably coupled to the cladding.

17. The device of claim 16 , wherein the peripheral photosensitive element is located on or within a substrate.

18. The device of claim 1 , further comprising a color or IR filter.

19. A compound light detector comprising at least two different devices, the device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a waveguide comprising a nanowire disposed on or within the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths of the incoming radiation up to a selective wavelength and an active element to detect the wavelengths of the incoming radiation up to the selective wavelength transmitted through the nanowire, and the compound light detector is configured to reconstruct a spectrum of wavelengths of an electromagnetic radiation beam; wherein the device further comprises a cladding; wherein the cladding is configured to be a channel to transmit the wavelengths of the electromagnetic radiation beam that do not transmit through the nanowire; and wherein the cladding comprises more than one layers, wherein the more than one layers have indices of refraction consecutively smaller than an index of refraction the nanowire.

20. The compound light detector of claim 19 , wherein the at least two different devices have nanowires having different diameters.

21. The compound light detector of claim 19 , further comprising a cladding surrounding the nanowire and of one or more different materials, wherein the cladding permits electromagnetic radiation of wavelengths beyond the selective wavelength to remains within the cladding and be transmitted to a peripheral photosensitive element.

22. The compound light detector of claim 19 , wherein the spectrum of wavelengths comprises wavelengths of visible light, IR or combinations thereof.

23. The compound light detector of claim 19 , wherein a first device comprises a core of a different diameter than that of a second device and the spectrum of wavelengths comprises wavelengths of visible light, IR or combinations thereof.

24. The compound light detector of claim 19 , wherein the compound light detector is configured to resolve black and white or luminescence information contained in the electromagnetic radiation beam.

25. The compound light detector of claim 19 , wherein the compound light detector is configured to detect energies of the electromagnetic radiation of four different ranges of wavelengths.

26. The compound light detector of claim 25 , wherein the energies of the electromagnetic radiation of the four different ranges of wavelengths are combined to construct red, green and blue colors.

27. The compound light detector of claim 19 , wherein at least some of the at least one of the devices does not include a color or infra-red filter.